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SD1134

STMicroelectronics

SD1134 by STMicroelectronics

SD1134 by STMicroelectronics is an NPN RF BJT transistor with a max power dissipation of 5W and max collector current of 0.75A. It operates in the ultra-high frequency band, suitable for applications requiring high-frequency signal amplification in radial terminal configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,963 parts In-Stock

1+ parts

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4,963

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Vyrian

USA . 4,887 parts In-Stock

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4,887

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Anansix

USA . 2,515 parts In-Stock

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2,515

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Mil-Aero Solutions, Inc.

USA . 6 parts In-Stock

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6

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,247 parts In-Stock

1+ parts

$0.937

100+ parts

-

1k+ parts

$0.843

10k+ parts

-

1,247

$0.937

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$0.843

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MKK Technologies

India . 1,143 parts In-Stock

1+ parts

$1.761

100+ parts

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1,143

$1.761

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DigiPath Technology Company

USA . 1,143 parts In-Stock

1+ parts

$1.761

100+ parts

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1,143

$1.761

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Corphita

USA . 4,458 parts In-Stock

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4,458

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Parana Technologies

USA . 1,296 parts In-Stock

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$1.120

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1,296

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$1.120

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Overview

Unleash the power of cutting-edge technology with the SD1134 by STMicroelectronics. As a leader in RF Small Signal Bipolar Junction Transistors, this NPN transistor offers unparalleled quality and reliability. From ultra high frequency band applications to post/stud mount package style, this transistor is perfect for a wide range of electronic projects. With a maximum power dissipation of 5W and maximum collector current of 0.75A, the SD1134 provides exceptional performance while maintaining a compact design. Elevate your projects to the next level with the SD1134 and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

The NPN polarity type allows for easy integration with other NPN components in circuits, enhancing compatibility and flexibility.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to use this transistor in various applications.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in different types of circuits and PCB layouts.

Terminal Form: FLAT

The flat terminal form facilitates soldering and connection to other components, ensuring secure and reliable electrical contact.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band allows for high-speed signal processing and communication, making this transistor suitable for advanced applications.

No. of Terminals: 4

Having 4 terminals provides additional connection options for different circuit configurations and requirements.

Maximum Power Dissipation (Abs): 5 W

With a maximum power dissipation of 5W, this transistor can handle high-power applications without overheating or failing.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount package style simplifies the installation process and ensures mechanical stability in various mounting arrangements.

Maximum Operating Temperature: 175 °C

The maximum operating temperature of 175 °C allows this transistor to withstand high-temperature environments, improving overall reliability.

Maximum Collector-Emitter Voltage: 16 V

The high maximum collector-emitter voltage rating of 16V enables this transistor to handle higher voltages in circuits without breakdown or damage.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides excellent performance characteristics, reliability, and efficiency in various operating conditions.

Maximum Collector Current (IC): 0.75 A

The maximum collector current rating of 0.75A allows for handling high currents in circuits, making this transistor suitable for power applications.

Terminal Position: RADIAL

The radial terminal position simplifies PCB layout and allows for easy integration into different circuit designs, enhancing overall versatility.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SD1134 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

5 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

SILICON

Trade Compliance

SD1134 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5310-00-208-6547, 5310002086547

NIIN

002086547

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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