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SS9018FBU

Onsemi

SS9018FBU by Onsemi

SS9018FBU by Onsemi is an NPN BJT transistor with a max collector-emitter voltage of 15V and fT of 1100MHz. Ideal for amplifier applications, it has a max power dissipation of 0.4W and operates at temperatures up to 150°C in the very high-frequency band.

Median Price

$0.028

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 127,666 parts In-Stock

1+ parts

-

100+ parts

$0.025

1k+ parts

$0.021

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$0.019

127,666

-

$0.025

$0.021

$0.019

DigiKey

USA . 107,666 parts In-Stock

1+ parts

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$0.030

107,666

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$0.030

Flip Electronics (Authorized)

USA . 8,383 parts In-Stock

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8,383

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Nova Conductors

Japan . 700 parts In-Stock

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$0.019

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700

$0.019

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Digiode

USA . 2,955 parts In-Stock

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$0.024

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2,955

$0.024

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DigiKey Marketplace

USA . 107,666 parts In-Stock

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107,666

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Chip Stock

USA . 72,000 parts In-Stock

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Vyrian

USA . 63,647 parts In-Stock

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63,647

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Flip Electronics

USA . 8,383 parts In-Stock

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8,383

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Distributors (Availability)

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Corohmni

South Africa . 372 parts In-Stock

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$0.019

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372

$0.019

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Aranea Global

USA . 50 parts In-Stock

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$0.019

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$0.018

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50

$0.019

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$0.018

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Argo Parts USA

USA . 49 parts In-Stock

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$0.019

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49

$0.019

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$0.019

Corphita

USA . 2,137 parts In-Stock

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$0.022

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2,137

$0.022

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Ampacity Inc.

Singapore . 63,542 parts In-Stock

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$0.046

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63,542

$0.046

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Continental Prestige Electronics

USA . 60,000 parts In-Stock

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$0.016

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$0.016

QUARKTWIN TECHNOLOGY LTD

USA . 11,347 parts In-Stock

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Kulean Microsystems

USA . 4,092 parts In-Stock

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SupplyDigital Components

Austria . 2,907 parts In-Stock

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TANS Electronics

Latvia . 1,743 parts In-Stock

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1,743

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Supply Digital

USA . 1,702 parts In-Stock

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Problanco Electronics

Mexico . 186 parts In-Stock

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UHIMA Technologies

Türkiye . 165 parts In-Stock

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Overview

Enhance your electronic projects with the SS9018FBU by Onsemi - a high-quality RF Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for amplifier applications in the very high-frequency band. With a maximum operating temperature of 150°C and a nominal transition frequency of 1100 MHz, this transistor delivers superior results. Upgrade your designs with the SS9018FBU and experience the benefits of Onsemi's expertise and innovation. Elevate your projects to the next level with this top-of-the-line transistor!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, making it suitable for portable or rugged applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various applications.

Package Shape: ROUND

The round package shape allows for efficient placement on circuit boards and space-saving design, making it suitable for compact applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for use in demanding environments.

Nominal Transition Frequency (fT): 1100 MHz

The high nominal transition frequency of 1100 MHz indicates excellent high-frequency performance, making this transistor ideal for very high frequency band applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SS9018FBU attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

54

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SS9018FBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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