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SS9018G

Onsemi

SS9018G by Onsemi

SS9018G by Onsemi is a NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 72, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,895 parts In-Stock

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Digiode

USA . 1,427 parts In-Stock

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Kepictronics

USA . 160,000 parts In-Stock

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Problanco Electronics

Mexico . 5,649 parts In-Stock

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TANS Electronics

Latvia . 3,096 parts In-Stock

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Corphita

USA . 2,586 parts In-Stock

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Supply Digital

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Kulean Microsystems

USA . 912 parts In-Stock

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UHIMA Technologies

Türkiye . 783 parts In-Stock

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SupplyDigital Components

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Overview

Experience superior performance and reliability with the SS9018G by Onsemi. Crafted by a trusted manufacturer, this RF Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and precision. Ideal for amplifier applications in the L band, this NPN transistor boasts a high DC current gain and low VCEsat, ensuring optimal functionality. Its robust design and maximum power dissipation make it a valuable asset for your electronic projects. Elevate your creations with the SS9018G and enjoy seamless operation and exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for various applications.

Polarity or Channel Type: NPN

Commonly used type for amplification purposes.

Configuration: SINGLE

Simplified setup and easy to work with.

Transistor Application: AMPLIFIER

Specifically designed for signal amplification tasks.

Maximum VCEsat: 0.5 V

Low saturation voltage for efficient operation.

No. of Terminals: 3

Basic and straightforward connection setup.

Maximum Power Dissipation (Abs): 0.4 W

Efficient power handling capability.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments.

Maximum Collector-Emitter Voltage: 15 V

Suitable for low to medium voltage applications.

Nominal Transition Frequency (fT): 1100 MHz

High frequency capability for fast signal switching.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SS9018G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

72

Highest Frequency Band:

L BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.4 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

SS9018G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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