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MMBTH10RG

Onsemi

MMBTH10RG by Onsemi

MMBTH10RG by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 40V and a transition frequency of 450MHz. It is ideal for amplifier applications in the ultra-high-frequency band, featuring a small outline package with gull wing terminals for surface mount assembly. With a DC current gain of at least 50 and a max power dissipation of 0.225W, this transistor operates efficiently at temperatures up to 150°C.

Median Price

$0.077

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 376,163 parts In-Stock

1+ parts

-

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$0.077

1k+ parts

$0.064

10k+ parts

$0.057

376,163

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$0.077

$0.064

$0.057

Verical

USA . 376,163 parts In-Stock

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$0.071

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$0.071

DigiKey

USA . 135,000 parts In-Stock

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$0.100

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$0.100

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Digiode

USA . 1,065 parts In-Stock

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$0.062

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$0.062

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Vyrian

USA . 2,001 parts In-Stock

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$0.065

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Chip Stock

USA . 48,500 parts In-Stock

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48,500

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Prism Electronics

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Corphita

USA . 381 parts In-Stock

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$0.058

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381

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Corohmni

South Africa . 219 parts In-Stock

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$0.065

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219

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Continental Prestige Electronics

USA . 378,330 parts In-Stock

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$0.057

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QUARKTWIN TECHNOLOGY LTD

USA . 29,807 parts In-Stock

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Perfect Parts

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Kepictronics

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Metaverse IC Inc.

Canada . 7,550 parts In-Stock

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Problanco Electronics

Mexico . 3,791 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 1,779 parts In-Stock

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UHIMA Technologies

Türkiye . 544 parts In-Stock

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Supply Digital

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TANS Electronics

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Overview

Unlock the power of high-quality RF signal amplification with the MMBTH10RG by Onsemi. Designed for ultra-high frequency band applications, this NPN transistor offers unparalleled performance and reliability. With a sleek rectangular package body made of durable plastic/epoxy material, this single-configuration transistor is perfect for surface mount installations. Elevate your amplifier projects with the MMBTH10RG's impressive features, including a maximum collector-emitter voltage of 40V and a nominal transition frequency of 450 MHz. Trust in Onsemi's reputation for excellence and innovation, and experience the superior value and benefits that the MMBTH10RG brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

Offers a high current gain and low on-resistance, making it suitable for amplification purposes.

Configuration: SINGLE

Simplifies the circuit design and makes it easier to integrate into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in such applications.

Surface Mount: YES

Provides easy installation and space-saving capabilities, ideal for compact designs.

Maximum Collector-Emitter Voltage: 40 V

Can handle higher voltage levels, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 450 MHz

Offers high-frequency operation, making it suitable for applications requiring fast signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMBTH10RG attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.6 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTH10RG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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