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BFP540ESDH6327XTSA1

Infineon Technologies

BFP540ESDH6327XTSA1 by Infineon Technologies

BFP540ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for S Band applications. With a max collector-emitter voltage of 4.5V and a nominal transition frequency of 30,000 MHz, it offers high performance in a small outline package.

Median Price

$0.517

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 3,235 parts In-Stock

1+ parts

$0.517

100+ parts

$0.347

1k+ parts

$0.248

10k+ parts

$0.215

3,235

$0.517

$0.347

$0.248

$0.215

Mouser Electronics

USA . 13,449 parts In-Stock

1+ parts

$0.530

100+ parts

$0.267

1k+ parts

$0.245

10k+ parts

$0.226

13,449

$0.530

$0.267

$0.245

$0.226

Newark

USA . 2,691 parts In-Stock

1+ parts

$0.546

100+ parts

$0.318

1k+ parts

-

10k+ parts

-

2,691

$0.546

$0.318

-

-

DigiKey

USA . 1,400 parts In-Stock

1+ parts

$0.620

100+ parts

$0.338

1k+ parts

$0.287

10k+ parts

-

1,400

$0.620

$0.338

$0.287

-

Element14

Singapore . 100 parts In-Stock

1+ parts

$0.891

100+ parts

$0.458

1k+ parts

-

10k+ parts

-

100

$0.891

$0.458

-

-

EBV Elektronik

Germany . 27,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,000

-

-

-

-

Chip1Stop

Japan . 3,650 parts In-Stock

1+ parts

-

100+ parts

$0.211

1k+ parts

-

10k+ parts

-

3,650

-

$0.211

-

-

Verical

USA . 3,650 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.323

10k+ parts

-

3,650

-

-

$0.323

-

RS (Exports)

UK . 2,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.330

10k+ parts

$0.229

2,800

-

-

$0.330

$0.229

Rochester

USA . 495 parts In-Stock

1+ parts

-

100+ parts

$0.268

1k+ parts

$0.223

10k+ parts

$0.199

495

-

$0.268

$0.223

$0.199

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 88 parts In-Stock

1+ parts

$0.200

100+ parts

-

1k+ parts

-

10k+ parts

-

88

$0.200

-

-

-

Nova Conductors

Japan . 42 parts In-Stock

1+ parts

$0.287

100+ parts

-

1k+ parts

-

10k+ parts

-

42

$0.287

-

-

-

Vyrian

USA . 38,782 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

38,782

-

-

-

-

NAC Semi

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.620

36,000

-

-

-

$0.620

VNN

France . 32,833 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

32,833

-

-

-

-

IBS Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.241

6,000

-

-

-

$0.241

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 54,550 parts In-Stock

1+ parts

$0.178

100+ parts

-

1k+ parts

-

10k+ parts

-

54,550

$0.178

-

-

-

Semicontronic

India . 53,277 parts In-Stock

1+ parts

$0.178

100+ parts

$0.174

1k+ parts

$0.173

10k+ parts

-

53,277

$0.178

$0.174

$0.173

-

Corphita

USA . 365 parts In-Stock

1+ parts

$0.189

100+ parts

-

1k+ parts

-

10k+ parts

-

365

$0.189

-

-

-

Argo Parts USA

USA . 2,792 parts In-Stock

1+ parts

$0.265

100+ parts

-

1k+ parts

-

10k+ parts

$0.257

2,792

$0.265

-

-

$0.257

Component Stockers USA

USA . 15,419 parts In-Stock

1+ parts

$0.540

100+ parts

$0.300

1k+ parts

$0.240

10k+ parts

-

15,419

$0.540

$0.300

$0.240

-

Corohmni

South Africa . 686 parts In-Stock

1+ parts

$1.127

100+ parts

-

1k+ parts

-

10k+ parts

-

686

$1.127

-

-

-

Modulus Dynamics

Lithuania . 22,883 parts In-Stock

1+ parts

$1.522

100+ parts

$1.461

1k+ parts

$1.400

10k+ parts

-

22,883

$1.522

$1.461

$1.400

-

Aztec Data Supply Inc.

USA . 405 parts In-Stock

1+ parts

$1.958

100+ parts

-

1k+ parts

-

10k+ parts

-

405

$1.958

-

-

-

Andel Nordic

Denmark . 2,665 parts In-Stock

1+ parts

$44.310

100+ parts

-

1k+ parts

$31.016

10k+ parts

$31.016

2,665

$44.310

-

$31.016

$31.016

RC Electronics

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

$0.290

1k+ parts

$0.280

10k+ parts

$0.270

18,000

-

$0.290

$0.280

$0.270

Perfect Parts

USA . 10,568 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,568

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

GreenTree Electronics

Israel . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Continental Prestige Electronics

USA . 2,648 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.255

10k+ parts

$0.243

2,648

-

$0.291

$0.255

$0.243

Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.281

1k+ parts

$0.273

10k+ parts

$0.267

2,000

-

$0.281

$0.273

$0.267

Robosynatics

Brazil . 500 parts In-Stock

1+ parts

-

100+ parts

$1.300

1k+ parts

$1.300

10k+ parts

$1.300

500

-

$1.300

$1.300

$1.300

Lucentia Tech

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$1.300

1k+ parts

$1.300

10k+ parts

$1.300

500

-

$1.300

$1.300

$1.300

Overview

Unlock the power of superior performance with the BFP540ESDH6327XTSA1 by Infineon Technologies. As a leading manufacturer in RF Small Signal Bipolar Junction Transistors (BJT), Infineon Technologies delivers unparalleled quality and reliability. Designed for amplification applications, this single NPN transistor offers exceptional value and benefits. With its small outline package and surface mount capability, it is perfect for various S Band frequency applications. Experience the advantage of Infineon Technologies and elevate your projects to new heights with the BFP540ESDH6327XTSA1.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides durability and protection, making it suitable for a wide range of applications.

Polarity or Channel Type

NPN - The NPN configuration allows for efficient amplification and control of current, making this transistor ideal for amplifier applications.

Configuration

SINGLE - The single configuration simplifies circuit design and offers easy integration into various electronic systems.

Transistor Application

AMPLIFIER - This transistor is specifically designed for amplification purposes, ensuring high-quality signal amplification in audio or RF applications.

Surface Mount

YES - With surface mount capability, this transistor can be easily mounted onto PCBs, saving space and enhancing ease of assembly.

Package Shape

RECTANGULAR - The rectangular shape of the package provides straightforward mounting and secure connections in various electronic devices.

Terminal Form

GULL WING - The gull wing terminal form facilitates efficient soldering and ensures reliable electrical connections.

Highest Frequency Band

S BAND - With a highest frequency band in the S band range, this transistor enables excellent performance in RF applications.

No. of Elements

1 - The presence of a single element simplifies circuit design and reduces complexity in manufacturing processes.

No. of Terminals

4 - The 4 terminals offer flexibility in connecting the transistor to other components, enhancing versatility in circuit design.

Package Style (Meter)

SMALL OUTLINE - The small outline package style allows for compact designs and efficient use of space in electronic systems.

Maximum Collector-Base Capacitance

0.24 pF - The low maximum collector-base capacitance ensures minimal signal distortion and provides improved performance in high-frequency applications.

Maximum Collector-Emitter Voltage

4.5 V - The high maximum collector-emitter voltage rating offers enhanced voltage handling capabilities, ensuring reliable operation in demanding environments.

Transistor Element Material

SILICON - The use of silicon as the transistor element material enables high switching speeds and durability, making it suitable for various applications.

Maximum Collector Current (IC)

0.08 A - The high maximum collector current rating allows for efficient power handling, making this transistor reliable and suitable for applications requiring higher currents.

Terminal Finish

TIN - The tin terminal finish enhances the solderability and durability of the terminals, ensuring reliable connections and improved product longevity.

Terminal Position

DUAL - The dual terminal position provides flexibility in circuit design and offers multiple connection options to suit different application requirements.

Moisture Sensitivity Level (MSL)

1 - With a moisture sensitivity level of 1, this transistor is well-protected against moisture-induced failures, ensuring long-term reliability.

Reference Standard

AEC-Q101 - Complying with the AEC-Q101 standard ensures the high quality and reliability of this transistor, making it suitable for automotive applications.

Nominal Transition Frequency (fT)

30000 MHz - The high nominal transition frequency allows for efficient signal amplification and ensures excellent performance in high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP540ESDH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

HIGH RELIABILITY, LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.24 pF

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Highest Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFP540ESDH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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