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BFP520H6327XTSA1

Infineon Technologies

BFP520H6327XTSA1 by Infineon Technologies

BFP520H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating in L Band up to 45GHz. It has a max power dissipation of 0.1W and max collector-emitter voltage of 2.5V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 standard compliance.

Median Price

$0.410

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,704 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

-

5,704

$0.093

-

-

-

Farnell

UK . 855 parts In-Stock

1+ parts

$0.439

100+ parts

$0.222

1k+ parts

$0.203

10k+ parts

$0.192

855

$0.439

$0.222

$0.203

$0.192

Mouser Electronics

USA . 8,704 parts In-Stock

1+ parts

$0.520

100+ parts

$0.263

1k+ parts

$0.241

10k+ parts

$0.222

8,704

$0.520

$0.263

$0.241

$0.222

Newark

USA . 855 parts In-Stock

1+ parts

$0.525

100+ parts

$0.266

1k+ parts

$0.242

10k+ parts

-

855

$0.525

$0.266

$0.242

-

DigiKey

USA . 5,901 parts In-Stock

1+ parts

$0.610

100+ parts

$0.333

1k+ parts

$0.282

10k+ parts

-

5,901

$0.610

$0.333

$0.282

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Rochester

USA . 42,465 parts In-Stock

1+ parts

-

100+ parts

$0.264

1k+ parts

$0.219

10k+ parts

$0.195

42,465

-

$0.264

$0.219

$0.195

Verical

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.244

33,000

-

-

-

$0.244

RS (Exports)

UK . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.382

1k+ parts

$0.244

10k+ parts

$0.171

3,000

-

$0.382

$0.244

$0.171

Distrelec

Netherlands . 2,995 parts In-Stock

1+ parts

-

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2,995

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Chip1Stop

Japan . 2,735 parts In-Stock

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2,735

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 731 parts In-Stock

1+ parts

$0.116

100+ parts

-

1k+ parts

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731

$0.116

-

-

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.182

100+ parts

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450

$0.182

-

-

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TME

Poland . 24 parts In-Stock

1+ parts

$0.390

100+ parts

$0.177

1k+ parts

$0.161

10k+ parts

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24

$0.390

$0.177

$0.161

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Vyrian

USA . 10,743 parts In-Stock

1+ parts

-

100+ parts

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10,743

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

$0.350

3,000

-

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$0.350

VNN

France . 2,951 parts In-Stock

1+ parts

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2,951

-

-

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Schukat

Germany . 2,400 parts In-Stock

1+ parts

-

100+ parts

$0.194

1k+ parts

$0.134

10k+ parts

$0.129

2,400

-

$0.194

$0.134

$0.129

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 10,328 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

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10,328

$0.068

-

-

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Corphita

USA . 984 parts In-Stock

1+ parts

$0.110

100+ parts

-

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984

$0.110

-

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Component Stockers USA

USA . 43,765 parts In-Stock

1+ parts

$0.130

100+ parts

$0.120

1k+ parts

$0.110

10k+ parts

$0.090

43,765

$0.130

$0.120

$0.110

$0.090

Argo Parts USA

USA . 4,292 parts In-Stock

1+ parts

$0.182

100+ parts

-

1k+ parts

-

10k+ parts

$0.176

4,292

$0.182

-

-

$0.176

Continental Prestige Electronics

USA . 3,280 parts In-Stock

1+ parts

$0.182

100+ parts

-

1k+ parts

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10k+ parts

$0.178

3,280

$0.182

-

-

$0.178

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.185

100+ parts

$0.185

1k+ parts

$0.185

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-

600

$0.185

$0.185

$0.185

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Aztec Data Supply Inc.

USA . 3,798 parts In-Stock

1+ parts

$0.650

100+ parts

-

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3,798

$0.650

-

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Modulus Dynamics

Lithuania . 221 parts In-Stock

1+ parts

$1.018

100+ parts

$0.977

1k+ parts

$0.937

10k+ parts

-

221

$1.018

$0.977

$0.937

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Corohmni

South Africa . 654 parts In-Stock

1+ parts

$1.754

100+ parts

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654

$1.754

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RC Electronics

USA . 100,000 parts In-Stock

1+ parts

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100+ parts

$0.260

1k+ parts

$0.250

10k+ parts

$0.240

100,000

-

$0.260

$0.250

$0.240

Lixinc

USA . 14,823 parts In-Stock

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14,823

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Perfect Parts

USA . 13,630 parts In-Stock

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13,630

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S.R.D Solutions

India . 11,930 parts In-Stock

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11,930

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iodParts Technologies Inc.

India . 5,695 parts In-Stock

1+ parts

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5,695

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A-Z Elektronik GmbH

Germany . 4,500 parts In-Stock

1+ parts

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4,500

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.178

1k+ parts

$0.172

10k+ parts

$0.169

100

-

$0.178

$0.172

$0.169

GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

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50

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Overview

Discover the unmatched quality and reliability of the BFP520H6327XTSA1 by Infineon Technologies, a leading manufacturer in the industry. This RF Small Signal Bipolar Junction Transistor is perfect for amplifier applications in the L band, offering superior performance and efficiency. With a maximum operating temperature of 150°C and a small outline package style, this NPN transistor delivers outstanding value and benefits to customers looking for high-frequency solutions. Upgrade your projects with the BFP520H6327XTSA1 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification due to their high input impedance and fast switching speeds.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Facilitates easy and efficient mounting on printed circuit boards.

Terminal Form: GULL WING

Allows for secure and reliable connections during installation.

Highest Frequency Band: L BAND

Suitable for applications in the L band frequency range, making it versatile for various RF designs.

No. of Terminals: 4

Provides multiple connection points for enhanced functionality in circuit design.

Maximum Power Dissipation (Abs): 0.1 W

Capable of handling power dissipation requirements without overheating, ensuring stable operation.

Package Style (Meter): SMALL OUTLINE

Compact design enables space-efficient integration within electronic devices.

Minimum DC Current Gain (hFE): 70

High DC current gain ensures efficient amplification and signal processing.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for various environmental conditions.

Maximum Collector-Base Capacitance: 0.13 pF

Low capacitance minimizes signal distortion and interference in high-frequency applications.

Maximum Collector-Emitter Voltage: 2.5 V

Provides a safe operating voltage range for reliable performance.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stability and efficiency in transistor manufacturing.

Maximum Collector Current (IC): 0.04 A

Sufficient collector current capability for many amplifier and signal processing applications.

Terminal Finish: TIN

Tin finish enhances solderability and conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in circuit layout and installation.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Nominal Transition Frequency (fT): 45000 MHz

High transition frequency enables fast signal processing and amplification, suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP520H6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.13 pF

Maximum Collector-Emitter Voltage:

2.5 V

Configuration:

Minimum DC Current Gain (hFE):

70

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFP520H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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