Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
BFP520H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating in L Band up to 45GHz. It has a max power dissipation of 0.1W and max collector-emitter voltage of 2.5V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 standard compliance.
Median Price
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DigiKey
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Advanced Electronics
$0.185
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$0.650
Modulus Dynamics
$1.018
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$1.754
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Lixinc
Perfect Parts
S.R.D Solutions
iodParts Technologies Inc.
A-Z Elektronik GmbH
Netroflash
$0.172
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GreenTree Electronics
Provides durability and protection for the transistor, ensuring a longer lifespan.
NPN transistors are commonly used for amplification due to their high input impedance and fast switching speeds.
Simplifies circuit design and integration.
Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.
Facilitates easy and efficient mounting on printed circuit boards.
Allows for secure and reliable connections during installation.
Suitable for applications in the L band frequency range, making it versatile for various RF designs.
Provides multiple connection points for enhanced functionality in circuit design.
Capable of handling power dissipation requirements without overheating, ensuring stable operation.
Compact design enables space-efficient integration within electronic devices.
High DC current gain ensures efficient amplification and signal processing.
Can withstand high operating temperatures, suitable for various environmental conditions.
Low capacitance minimizes signal distortion and interference in high-frequency applications.
Provides a safe operating voltage range for reliable performance.
Silicon is a common semiconductor material known for its stability and efficiency in transistor manufacturing.
Sufficient collector current capability for many amplifier and signal processing applications.
Tin finish enhances solderability and conductivity for reliable connections.
Dual terminal positioning offers flexibility in circuit layout and installation.
Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.
High transition frequency enables fast signal processing and amplification, suitable for high-frequency applications.
RF Small Signal Bipolar Junction Transistors (BJT) BFP520H6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Reference Standard:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFP520H6327XTSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Recyclable Glass Carrier 14/Oct/2014 Reel Cover Tape Chg 16/Feb/2016
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N2222A
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
TDK
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;
Tesla Elektronicke Soucastky
2N7002
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
BSS138
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
SMBJ18CA
Jgd Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
MBRS3200T3G
Onsemi
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
CRG0805F10K
TE Connectivity
TE Connectivity's CRG0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in various electronic circuits due to its compact size and high temperature rating.
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
SPC TECHNOLOGY/ MULTICOMP
MBRS360T3G
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
SS14
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DP83848IVVX/NOPB
Texas Instruments
Texas Instruments DP83848IVVX/NOPB is a 3.3V Ethernet transceiver with 100000 Mbps data rate, suitable for industrial applications. It features CMOS technology, operates b/w -40 to 85 °C, and comes in a low profile flatpack package with matte tin finish.
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
Renesas Electronics
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Zetex Plc
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;
15GN03FA-TL-H
RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;
SS9018H
SS9018H by Onsemi is an NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 97, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.
BFP640ESDH6327XTSA1
Infineon Technologies
BFP640ESDH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.1V VCE, 0.05A IC, and 45000MHz fT. It is used in X Band amplifiers for high-frequency applications. The package is a small outline with gull wing terminals and AEC-Q101 standard compliance.
MMBTH11
Fairchild Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
BFR520
The NXP Semiconductors BFR520 is a RF Small Signal BJT transistor with NPN polarity, ideal for amplifier applications. It has a max power dissipation of 0.3W, operates in L Band frequency up to 9000MHz, and can handle a max collector current of 0.07A.
HFA3046BZ
Renesas Electronics' HFA3046BZ is an NPN RF BJT with 5 elements and 14 terminals. Operating in the ultra-high frequency band at 8V, it's ideal for amplifier applications. This complex transistor has a max transition frequency of 8000MHz and is surface mountable with a small outline package style.
MMBTH10
Shanghai Lunsure Electronic Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;
KSC1730R
The Onsemi KSC1730R is an NPN RF BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications in the ultra-high frequency band. It has a min hFE of 40, operates at up to 150 °C, and features a max fT of 1100MHz.
BFU550WX
The NXP Semiconductors BFU550WX is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max collector-emitter voltage of 12V, fT of 11GHz, and can handle a max collector current of 0.05A.
BFR93A,235
NXP Semiconductors' BFR93A,235 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.35W and can handle up to 12V collector-emitter voltage.
START620TR
STMicroelectronics
START620TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.135 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 45 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.
934055894115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; Additional Features: HIGH RELIABILITY;
FMB3946
FMB3946 by Onsemi is a RF BJT transistor with NPN and PNP channels. It has 2 elements, 6 terminals, hFE of 30, max temp of 150°C, Vce of 40V, and fT of 200MHz. Ideal for switching applications due to its fast ton (38ns) and toff (190ns) times in a small outline package.
MPS5179RLRA
MPS5179RLRA by Onsemi is a NPN RF BJT transistor with 3 terminals, suitable for amplifier applications in the very high frequency band. It has a max collector-emitter voltage of 12V, max power dissipation of 0.2W, and transition frequency of 900MHz. Ideal for through-hole mounting in electronic circuits.
BFR93A
Siemens
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
MSC1000MP
STMicroelectronics' MSC1000MP is an NPN BJT transistor for amplifier applications. With a max operating temp of 200 °C, it has a hFE of 15 and VCE of 20V. This surface-mount transistor in round package style with 4 terminals is ideal for L Band frequency applications.
MSC2295-CT1G
MSC2295-CT1G by Onsemi is an NPN RF BJT transistor with a max operating temperature of 150 °C. It has a min DC current gain of 110 and a nominal transition frequency of 150 MHz, making it suitable for amplifier applications. The package style is small outline with Gull Wing terminals and a max collector-emitter voltage of 20V.
BFY90PBFREE
Central Semiconductor
BFY90PBFREE by Central Semiconductor is an NPN BJT for AMPLIFIER applications. Features include Gp: 21 dB, fT: 1400 MHz, and hFE: 20. With a max operating temperature of 200°C, it has a package style of CYLINDRICAL and terminal finish of MATTE TIN OVER NICKEL.
MPSH10RL1
MPSH10RL1 by Onsemi is an NPN RF BJT with 3 terminals, operating at up to 150 °C. It has a max Vce of 25V and fT of 650MHz, making it suitable for ultra-high frequency applications in cylindrical packages.
BFR96
Thomson-csf Semiconductors
NPN; Surface Mount: YES; Maximum Collector Current (IC): .075 A; Package Style (Meter): DISK BUTTON; JESD-30 Code: O-CRDB-F3; No. of Terminals: 3;
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BFP540FESDH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30000 MHz; Maximum Collector Current (IC): .08 A; Reference Standard: AEC-Q101;
BFP540ESDH6327XTSA1
BFP540ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for S Band applications. With a max collector-emitter voltage of 4.5V and a nominal transition frequency of 30,000 MHz, it offers high performance in a small outline package.
BFP520FH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .04 A; Highest Frequency Band: KU BAND;
BFP520
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .07 A;
BFP540
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .75 W; Maximum Collector Current (IC): .12 A;
BFP505
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .018 A;
BFP540ESDE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 34000 MHz; Maximum Collector Current (IC): .08 A; Package Shape: RECTANGULAR;
BFP520E6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 1;
BFP540ESDE6433
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 34000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A;
BFP540F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A;
BFP520E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .05 A; Terminal Position: DUAL;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30000 MHz; Maximum Collector Current (IC): .08 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BFP540ESDE6327
BFP540-E6327
BFP520-E6433
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .04 A; Minimum DC Current Gain (hFE): 70; No. of Elements: 1;
BFP540E6433
BFP540ECSP
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 29000 MHz; Maximum Collector Current (IC): .08 A; Maximum Operating Temperature: 150 Cel;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .05 A; Case Connection: EMITTER;
BFP520F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .04 A;
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