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BF240

Onsemi

BF240 by Onsemi

BF240 by Onsemi is a NPN BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 40V, max collector current of 0.025A, and fT of 600MHz. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,200 parts In-Stock

1+ parts

-

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$0.092

1k+ parts

$0.077

10k+ parts

$0.068

1,200

-

$0.092

$0.077

$0.068

Distributors (In-Stock)

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Digiode

USA . 2,372 parts In-Stock

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$0.072

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2,372

$0.072

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Vyrian

USA . 4,058 parts In-Stock

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$0.076

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4,058

$0.076

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DF Sales Co.

USA . 478 parts In-Stock

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$0.240

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478

$0.240

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DF Sales Co.

USA . 478 parts In-Stock

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$0.240

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478

$0.240

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ComSIT Distribution GmbH

Germany . 26,870 parts In-Stock

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Infinite Electronics LLP

India . 20,000 parts In-Stock

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ES Components

USA . 6,660 parts In-Stock

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R&J Components

USA . 6,017 parts In-Stock

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Anansix

USA . 3,087 parts In-Stock

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ECAB

Sweden . 2,703 parts In-Stock

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TME

Poland . 2,282 parts In-Stock

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$0.473

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$0.326

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$0.473

$0.326

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Huijzer Components

Netherlands . 1,425 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 1,392 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1,364 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,031 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 920 parts In-Stock

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Manotoh

Italy . 204 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 199 parts In-Stock

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Halfin

Belgium . 163 parts In-Stock

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LittleDiode

UK . 118 parts In-Stock

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118

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GES GmbH

Germany . 50 parts In-Stock

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50

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Distributors (Availability)

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Corphita

USA . 4,936 parts In-Stock

1+ parts

$0.068

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4,936

$0.068

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Corohmni

South Africa . 482 parts In-Stock

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$0.076

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482

$0.076

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Native Components

USA . 1,440 parts In-Stock

1+ parts

$0.099

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$0.095

1,440

$0.099

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$0.095

Northwest PG Solutions

USA . 3,935 parts In-Stock

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$0.109

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$0.096

3,935

$0.109

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$0.096

Modulus Dynamics

Lithuania . 25,529 parts In-Stock

1+ parts

$0.433

100+ parts

$0.416

1k+ parts

$0.398

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25,529

$0.433

$0.416

$0.398

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QUARKTWIN TECHNOLOGY LTD

USA . 14,426 parts In-Stock

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Assy Fe

Spain . 12,109 parts In-Stock

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UNI Independent Distributors

Spain . 7,388 parts In-Stock

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Problanco Electronics

Mexico . 6,662 parts In-Stock

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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Kulean Microsystems

USA . 4,473 parts In-Stock

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Perfect Parts

USA . 4,070 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,885 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 3,827 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 3,241 parts In-Stock

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Supply Digital

USA . 2,889 parts In-Stock

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UHIMA Technologies

Türkiye . 921 parts In-Stock

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SupplyDigital Components

Austria . 635 parts In-Stock

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635

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Overview

Enhance your amplification projects with the BF240 by Onsemi, a top-quality RF Small Signal BJT that delivers unparalleled performance and reliability. With Onsemi's stellar reputation for innovation and excellence, you can trust that this NPN transistor will exceed your expectations. Whether you're working on radio frequency applications or need precise signal amplification, the BF240 offers unmatched value and benefits. Upgrade your circuits today and experience the difference with Onsemi's BF240.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and can be easily integrated into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification, ensuring optimal performance in amplification circuits.

Maximum Collector-Base Capacitance: 0.34 pF

Low capacitance minimizes signal distortion and improves high-frequency response in amplifier circuits.

Maximum Collector-Emitter Voltage: 40 V

Suitable for use in low-voltage applications, providing reliable performance within the specified voltage range.

Max Collector Current (IC): 0.025 A

Capable of handling currents up to 0.025 A, making it suitable for low-power applications.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency allows for efficient signal amplification at high frequencies, making it ideal for radio frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF240 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.34 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF240 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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