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A5T4260

Texas Instruments

A5T4260 by Texas Instruments

A5T4260 by Texas Instruments is a PNP BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.5W, operating temperature up to 175°C, and collector-emitter voltage of 15V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,857 parts In-Stock

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5,857

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Digiode

USA . 1,878 parts In-Stock

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1,878

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Distributors (Availability)

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Native Components

USA . 311 parts In-Stock

1+ parts

$0.043

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-

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$0.041

311

$0.043

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$0.041

Parana Technologies

USA . 1,446 parts In-Stock

1+ parts

$1.414

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-

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$2.115

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1,446

$1.414

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$2.115

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DigiPath Technology Company

USA . 1,836 parts In-Stock

1+ parts

$1.557

100+ parts

$1.433

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-

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1,836

$1.557

$1.433

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ChromeModa Solutions

Germany . 6,456 parts In-Stock

1+ parts

$1.589

100+ parts

$1.303

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6,456

$1.589

$1.303

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IDEA Electronic Components Group

UK . 1,834 parts In-Stock

1+ parts

$1.589

100+ parts

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$1.430

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1,834

$1.589

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$1.430

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One Stop Electronics

USA . 331 parts In-Stock

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$16.050

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331

$16.050

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AZTECH Wire

Italy . 707 parts In-Stock

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$17.081

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707

$17.081

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Semicontronic

India . 194 parts In-Stock

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$56.050

100+ parts

$54.649

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$54.368

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194

$56.050

$54.649

$54.368

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Ampacity Inc.

Singapore . 397 parts In-Stock

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$63.050

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397

$63.050

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Northwest PG Solutions

USA . 1,842 parts In-Stock

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Corphita

USA . 613 parts In-Stock

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Corohmni

South Africa . 199 parts In-Stock

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Overview

Elevate your RF amplifier designs with the A5T4260 by Texas Instruments. Crafted with precision and expertise, this PNP transistor offers unparalleled performance in the ultra-high frequency band. Whether you're amplifying signals or enhancing your circuitry, this product delivers superior quality and reliability. With a maximum power dissipation of 0.5W and a nominal transition frequency of 1.6MHz, the A5T4260 is the perfect choice for your amplifier applications. Trust in Texas Instruments to bring you cutting-edge technology that exceeds expectations. Unlock the potential of your projects with the A5T4260 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering compatibility with specific circuit requirements.

Configuration: SINGLE

Simplified design and ease of implementation in circuits.

Transistor Application: AMPLIFIER

Ideal for use in amplifier circuits, providing signal amplification.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications, ensuring efficient signal processing.

Maximum Power Dissipation (Abs): 0.5 W

Capable of handling power dissipation up to 0.5 watts, suitable for various operating conditions.

Package Shape: ROUND

Compact and space-saving form factor, ideal for applications with limited space.

Terminal Form: WIRE

Easy to solder and connect in circuits, providing a reliable connection.

Maximum Collector-Base Capacitance: 2.5 pF

Low capacitance value helps in minimizing signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 15 V

Suitable for low-voltage applications, ensuring safe operation within specified limits.

Maximum Collector Current (IC): 0.03 A

Capable of handling collector currents up to 0.03 amps, suitable for various circuit requirements.

Nominal Transition Frequency (fT): 1.6 MHz

High transition frequency enables efficient signal processing and amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) A5T4260 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

A5T4260 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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