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2N4261

Texas Instruments

2N4261 by Texas Instruments

2N4261 by Texas Instruments is a PNP BJT transistor for AMPLIFIER applications. It has a hFE of 30, VCE of 15V, and fT of 2MHz. With a max power dissipation of 0.2W, it operates in the ULTRA HIGH FREQUENCY BAND.

Median Price

$5.000

Lifecycle Status

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19

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1k+

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Ace Electronics

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Vyrian

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Manoshevitz Elec. Sales

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Bristol Electronics

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Atlantic Semiconductor

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MISTER SPROCKETS

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Sinequanon

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Mentor Electronics Marketing, LLC

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Elcom Components

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Prism Electronics

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Odintec Ltd.

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Electronics Depot

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Fibra_Brandt Electronic GMBH

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A2Z Electronics, Inc.

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ICP Electronique

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LittleDiode

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Parana Technologies

USA . 1,716 parts In-Stock

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$0.509

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$1.628

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DigiPath Technology Company

USA . 1,696 parts In-Stock

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$0.561

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$0.516

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ChromeModa Solutions

Germany . 3,119 parts In-Stock

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$0.572

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$0.469

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IDEA Electronic Components Group

UK . 201 parts In-Stock

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$0.515

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Native Components

USA . 966 parts In-Stock

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$2.088

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Northwest PG Solutions

USA . 388 parts In-Stock

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AZTECH Wire

Italy . 702 parts In-Stock

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One Stop Electronics

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Ampacity Inc.

Singapore . 1,234 parts In-Stock

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Component Stockers USA

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Marpe Global Electronics

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QualityLine Systems

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Microchip USA

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Glotronic Ltd.

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Corphita

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RTC Component Inc.

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Perfect Parts

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Overview

Elevate your electronic projects with the Texas Instruments 2N4261 RF Small Signal Bipolar Junction Transistor. Designed for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, this PNP transistor offers top-notch performance and reliability. With a focus on quality, Texas Instruments delivers a product that exceeds expectations, providing customers with value and benefits that stand out. Whether you're a hobbyist or a professional, the 2N4261 is sure to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good heat dissipation, ensuring the transistor stays cool during operation, which can result in improved performance and longevity.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration makes it easy to integrate into various circuit designs and reduces complexity in the circuit layout.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: ROUND

Round package shape allows for easy mounting and handling, making it convenient for assembly.

Terminal Form: WIRE

Wire terminals provide a secure connection and are suitable for various connection methods, enhancing flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.2 W

High maximum power dissipation rating ensures the transistor can handle power effectively without overheating, improving reliability.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and space-saving design, making it suitable for applications with limited space.

Nominal Transition Frequency (fT): 2 MHz

High nominal transition frequency allows for high-frequency operation, making it suitable for applications that require fast switching speeds.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N4261 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4261 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-411-1937, 5961004111937, 5961-01-009-4956, 5961010094956, 5961-14-306-5340, 5961143065340, 5961-01-244-6749, 5961012446749

NIIN

004111937, 010094956, 143065340, 012446749

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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