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MCH6001-TL-E

Sanyo Semiconductor

MCH6001-TL-E by Sanyo Semiconductor

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 16 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .15 A;

Median Price

$0.582

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DigiKey

USA . 26,578 parts In-Stock

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Mouser Electronics

USA . 7,007 parts In-Stock

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Newark

USA . 2,880 parts In-Stock

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Arrow

USA . 3,000 parts In-Stock

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Future Electronics

Canada . 3,000 parts In-Stock

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Verical

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Chip1Stop

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Farnell

UK . 2,955 parts In-Stock

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Element14

Singapore . 2,955 parts In-Stock

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Vyrian

USA . 1,553 parts In-Stock

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Digiode

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Chip Stock

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IBS Electronics

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NAC Semi

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Flip Electronics

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Nova Conductors

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Corohmni

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Corphita

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Component Stockers USA

USA . 35,917 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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Problanco Electronics

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Authorized Procurement Solutions

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Eastek

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Continental Prestige Electronics

USA . 1,950 parts In-Stock

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SupplyDigital Components

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UHIMA Technologies

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MCH6001-TL-E attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Sanyo Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

8 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MCH6001-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Sanyo Semiconductor

PHOENIX, Ariz. and TOKYO, Japan – Jan. 3, 2011 – ON Semiconductor Corporation (Nasdaq: ONNN) today announced the completion of the acquisition of SANYO Semiconductor Co., Ltd., a subsidiary of SANYO Electric, and other assets related to SANYO Electric’s semiconductor business, by ON Semiconductor. Under the terms of the purchase agreement, ON Semiconductor paid approximately ¥11.8 billion ($144 million) in cash to SANYO Electric and drew down approximately ¥31.7 billion ($378 million) under a loan agreement with SANYO Electric. “The combination with SANYO Semiconductor represents an important step in the continued transformation of ON Semiconductor into a premier global supplier of high-performance silicon solutions for energy efficient electronics,” said Keith Jackson, president and CEO of ON Semiconductor. “This acquisition enables us to expand wholeheartedly into the Japanese market and to capture growth on a global basis. We believe this acquisition will create immediate value for customers, partners and investors, and we are excited to welcome the employees of SANYO Semiconductor to the ON Semiconductor family.”

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