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MPS6507ZL1

Onsemi

MPS6507ZL1 by Onsemi

MPS6507ZL1 by Onsemi is an NPN BJT transistor with a max collector-emitter voltage of 20V and a nominal transition frequency of 800MHz. It is commonly used as an amplifier in RF applications due to its low collector-base capacitance of 2.5pF, making it suitable for high-frequency operations.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,157 parts In-Stock

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Vyrian

USA . 1,155 parts In-Stock

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Kulean Microsystems

USA . 6,639 parts In-Stock

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SupplyDigital Components

Austria . 3,419 parts In-Stock

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TANS Electronics

Latvia . 2,205 parts In-Stock

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Corphita

USA . 1,134 parts In-Stock

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Problanco Electronics

Mexico . 671 parts In-Stock

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UHIMA Technologies

Türkiye . 668 parts In-Stock

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Corohmni

South Africa . 225 parts In-Stock

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Overview

Looking to amplify your signal with precision and reliability? Look no further than the MPS6507ZL1 by Onsemi! Crafted with top-notch quality and expertise, this RF Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance in amplifier applications. Its NPN configuration and cylindrical package ensure seamless integration, while its maximum operating temperature of 150 °C guarantees durability. Trust Onsemi to deliver value and excellence with every product, providing customers with the advantage they need to succeed in their projects. Elevate your amplification game with the MPS6507ZL1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the transistor lightweight and durable, ensuring long-term reliability in various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into existing circuits and provides compatibility with a wide range of amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it a cost-effective solution for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor excels in amplifying weak signals accurately and efficiently.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in connecting to different components within a circuit, enhancing overall functionality.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures stable performance even in demanding environments, making it suitable for a wide range of applications.

Maximum Collector-Base Capacitance: 2.5 pF

The low collector-base capacitance of 2.5 pF minimizes signal distortion and ensures high-frequency performance, making it ideal for high-speed applications.

Maximum Collector-Emitter Voltage: 20 V

With a maximum collector-emitter voltage of 20 V, this transistor provides a wide voltage range for flexibility in amplifier design and operation.

Nominal Transition Frequency (fT): 800 MHz

The high nominal transition frequency of 800 MHz indicates fast switching speeds and excellent high-frequency performance, making it ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS6507ZL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6507ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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