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MPS6507RL1

Onsemi

MPS6507RL1 by Onsemi

MPS6507RL1 by Onsemi is an NPN RF BJT with 20V VCEO, 2.5pF CBC, and 800MHz fT. Ideal for amplifier applications, it has a max operating temp of 150 °C. This through-hole transistor comes in a cylindrical package with tin-lead finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,283 parts In-Stock

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Vyrian

USA . 190 parts In-Stock

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190

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Kulean Microsystems

USA . 4,440 parts In-Stock

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TANS Electronics

Latvia . 3,358 parts In-Stock

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Problanco Electronics

Mexico . 3,265 parts In-Stock

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Corphita

USA . 2,155 parts In-Stock

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SupplyDigital Components

Austria . 2,083 parts In-Stock

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UHIMA Technologies

Türkiye . 934 parts In-Stock

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934

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Corohmni

South Africa . 409 parts In-Stock

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Overview

Discover the power of the MPS6507RL1 by Onsemi, a top-quality RF Small Signal Bipolar Junction Transistor (BJT) that delivers unparalleled performance in amplifier applications. With a reputation for excellence, Onsemi has crafted this NPN transistor with precision and care, ensuring reliability and durability. Whether you're a seasoned professional or an electronics enthusiast, this transistor's impressive specifications, including a high transition frequency and low collector-base capacitance, will elevate your projects to new heights. Trust Onsemi to provide you with the tools you need to succeed in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance.

Configuration: SINGLE

Simplified design with only one transistor in the package, making it easier to implement in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: ROUND

Compact and space-saving design, ideal for applications where space is limited.

Terminal Form: THROUGH-HOLE

Easy to mount and solder onto circuit boards, suitable for manual assembly.

No. of Terminals: 3

Simple and straightforward pin configuration, reducing chances of wiring errors during assembly.

Package Style (Meter): CYLINDRICAL

Durable and compact package style, suitable for various electronic devices.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Base Capacitance: 2.5 pF

Low capacitance helps in reducing signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 20 V

A higher collector-emitter voltage rating allows for wider range of operating conditions.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.05 A

Able to handle moderate current levels, suitable for low-power applications.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity for reliable connections.

Terminal Position: BOTTOM

Easy access to terminals for soldering and connection in circuit design.

Nominal Transition Frequency (fT): 800 MHz

High transition frequency allows for amplification of high-frequency signals with minimal distortion.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS6507RL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6507RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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