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BFP843H6327XTSA1

Infineon Technologies

BFP843H6327XTSA1 by Infineon Technologies

BFP843H6327XTSA1 by Infineon is a NPN RF BJT transistor with 4 terminals, suitable for C band applications. It has a max power dissipation of 0.125W, hFE of 150, and operates up to 150°C. Ideal for amplifier circuits in high-frequency communication systems due to its small outline package and low collector-emitter voltage of 2.25V.

Median Price

$0.264

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3 parts In-Stock

1+ parts

$0.116

100+ parts

-

1k+ parts

-

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3

$0.116

-

-

-

Mouser Electronics

USA . 8,307 parts In-Stock

1+ parts

$1.040

100+ parts

$0.421

1k+ parts

$0.293

10k+ parts

$0.222

8,307

$1.040

$0.421

$0.293

$0.222

Newark

USA . 5,615 parts In-Stock

1+ parts

$1.070

100+ parts

$0.434

1k+ parts

$0.302

10k+ parts

-

5,615

$1.070

$0.434

$0.302

-

DigiKey

USA . 8,762 parts In-Stock

1+ parts

$1.210

100+ parts

$0.492

1k+ parts

$0.343

10k+ parts

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8,762

$1.210

$0.492

$0.343

-

Rochester

USA . 263,340 parts In-Stock

1+ parts

-

100+ parts

$0.264

1k+ parts

$0.219

10k+ parts

$0.195

263,340

-

$0.264

$0.219

$0.195

Verical

USA . 154,705 parts In-Stock

1+ parts

-

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$0.244

154,705

-

-

-

$0.244

Farnell

UK . 5,439 parts In-Stock

1+ parts

-

100+ parts

$0.164

1k+ parts

$0.133

10k+ parts

$0.127

5,439

-

$0.164

$0.133

$0.127

Element14

Singapore . 5,409 parts In-Stock

1+ parts

-

100+ parts

$0.274

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-

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5,409

-

$0.274

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Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

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3,000

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RS (Exports)

UK . 2,950 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.155

2,950

-

-

-

$0.155

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 238 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

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238

$0.056

-

-

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.203

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870

$0.203

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Vyrian

USA . 45,427 parts In-Stock

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45,427

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VNN

France . 684 parts In-Stock

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684

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Bristol Electronics

USA . 331 parts In-Stock

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331

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 27 parts In-Stock

1+ parts

$0.053

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-

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27

$0.053

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Ampacity Inc.

Singapore . 45,481 parts In-Stock

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$0.109

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45,481

$0.109

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Component Stockers USA

USA . 175,664 parts In-Stock

1+ parts

$0.180

100+ parts

$0.300

1k+ parts

$0.190

10k+ parts

$0.180

175,664

$0.180

$0.300

$0.190

$0.180

Argo Parts USA

USA . 2,882 parts In-Stock

1+ parts

$0.203

100+ parts

-

1k+ parts

-

10k+ parts

$0.197

2,882

$0.203

-

-

$0.197

Modulus Dynamics

Lithuania . 20,853 parts In-Stock

1+ parts

$1.007

100+ parts

$0.967

1k+ parts

$0.926

10k+ parts

-

20,853

$1.007

$0.967

$0.926

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QUARKTWIN TECHNOLOGY LTD

USA . 28,256 parts In-Stock

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28,256

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Perfect Parts

USA . 6,944 parts In-Stock

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6,944

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Continental Prestige Electronics

USA . 2,851 parts In-Stock

1+ parts

-

100+ parts

$0.255

1k+ parts

$0.172

10k+ parts

$0.131

2,851

-

$0.255

$0.172

$0.131

Bastille Electronics

Australia . 40 parts In-Stock

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40

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Overview

Experience the unmatched quality and reliability of the BFP843H6327XTSA1 from Infineon Technologies. This RF Small Signal Bipolar Junction Transistor (BJT) is a game-changer in the amplifier industry, offering exceptional performance and versatility. With its NPN configuration and high-frequency capabilities up to C Band, this transistor is perfect for a wide range of applications. Trust in the expertise of Infineon Technologies to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the BFP843H6327XTSA1 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into existing circuit designs and compatibility with a wide range of components.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to work with for different amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and reliability in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Rectangular shape provides a standard form factor for easy integration into various electronic devices or circuit designs.

Terminal Form: GULL WING

Gull wing terminals offer a secure and reliable connection, enhancing the stability and performance of the transistor in operation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability and stability of the transistor even in demanding thermal conditions.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP843H6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5.23 pF

Maximum Collector-Emitter Voltage:

2.25 V

Configuration:

Minimum DC Current Gain (hFE):

150

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BFP843H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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