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TIS128

Texas Instruments

TIS128 by Texas Instruments

TIS128 by Texas Instruments is a PNP BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.25W, hFE of 30, and fT of 6.5MHz. With a max operating temp of 175°C and VCE of 45V, it's suitable for high-frequency circuit designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,817 parts In-Stock

1+ parts

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3,817

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Vyrian

USA . 3,578 parts In-Stock

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3,578

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 683 parts In-Stock

1+ parts

$0.934

100+ parts

-

1k+ parts

$1.846

10k+ parts

-

683

$0.934

-

$1.846

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DigiPath Technology Company

USA . 1,009 parts In-Stock

1+ parts

$1.028

100+ parts

$0.946

1k+ parts

-

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1,009

$1.028

$0.946

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ChromeModa Solutions

Germany . 5,504 parts In-Stock

1+ parts

$1.049

100+ parts

$0.860

1k+ parts

-

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5,504

$1.049

$0.860

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IDEA Electronic Components Group

UK . 1,398 parts In-Stock

1+ parts

$1.049

100+ parts

-

1k+ parts

$0.944

10k+ parts

-

1,398

$1.049

-

$0.944

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AZTECH Wire

Italy . 649 parts In-Stock

1+ parts

$6.331

100+ parts

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649

$6.331

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Semicontronic

India . 489 parts In-Stock

1+ parts

$21.050

100+ parts

$20.524

1k+ parts

$20.418

10k+ parts

-

489

$21.050

$20.524

$20.418

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One Stop Electronics

USA . 316 parts In-Stock

1+ parts

$31.050

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316

$31.050

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Ampacity Inc.

Singapore . 213 parts In-Stock

1+ parts

$51.050

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213

$51.050

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Corphita

USA . 1,552 parts In-Stock

1+ parts

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1,552

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Corohmni

South Africa . 112 parts In-Stock

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112

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Overview

Enhance your electronic projects with the TIS128 by Texas Instruments, a high-quality RF small signal bipolar junction transistor. Manufactured with precision and expertise, this PNP transistor offers unmatched performance in amplifier applications within the ultra-high frequency band. With a maximum power dissipation of 0.25W and a maximum operating temperature of 175°C, the TIS128 provides reliability and durability in a compact cylindrical package. Elevate your designs with the value and benefits of Texas Instruments' trusted technology, delivering superior functionality and efficiency to customers seeking top-tier components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides robustness and durability, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

Allows for positive current flow, making it suitable for specific circuit designs.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into a system.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in such circuits.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for applications requiring high-frequency operation, such as RF communication or signal processing.

Maximum Power Dissipation (Abs): 0.25 W

Can handle relatively high power levels, making it suitable for moderate power applications.

Maximum Operating Temperature: 175 °C

Can operate in higher temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 45 V

Can withstand high voltage levels, ensuring the safety and longevity of the transistor.

Nominal Transition Frequency (fT): 6.5 MHz

Indicates the speed and frequency response of the transistor, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) TIS128 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIS128 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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