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NSVF6003SB6T1G

Onsemi

NSVF6003SB6T1G by Onsemi

NSVF6003SB6T1G by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. With a min hFE of 100 and fT of 7000 MHz, it's ideal for amplifier applications in the UHF band. This small outline package has Gull Wing terminals and can handle up to 0.15A collector current.

Median Price

$0.428

Lifecycle Status

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1k+

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Arrow

USA . 5,426 parts In-Stock

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$0.201

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Farnell

UK . 2,299 parts In-Stock

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$0.377

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$0.200

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$0.175

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$0.377

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Mouser Electronics

USA . 2,699 parts In-Stock

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$0.480

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$0.348

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$0.277

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$0.256

2,699

$0.480

$0.348

$0.277

$0.256

DigiKey

USA . 1,382 parts In-Stock

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$0.550

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$0.302

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$0.257

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$0.550

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Element14

Singapore . 2,299 parts In-Stock

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$0.845

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$0.449

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$0.304

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2,299

$0.845

$0.449

$0.304

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Chip1Stop

Japan . 20,644 parts In-Stock

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$2.770

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$0.757

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$0.523

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20,644

$2.770

$0.757

$0.523

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Rochester

USA . 6,354 parts In-Stock

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$0.288

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$0.239

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$0.213

6,354

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$0.288

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$0.213

Verical

USA . 6,000 parts In-Stock

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Flip Electronics (Authorized)

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Digiode

USA . 1,944 parts In-Stock

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$0.224

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Vyrian

USA . 2,234 parts In-Stock

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Flip Electronics

USA . 32,973 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,722 parts In-Stock

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Bristol Electronics

USA . 2,722 parts In-Stock

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$0.480

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$0.207

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$0.192

2,722

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Dan-Mar Components

USA . 2,722 parts In-Stock

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Component Stockers USA

USA . 32,604 parts In-Stock

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$0.140

100+ parts

$0.130

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$0.130

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$0.290

32,604

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$0.130

$0.130

$0.290

Corohmni

South Africa . 360 parts In-Stock

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$0.184

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360

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Corphita

USA . 2,151 parts In-Stock

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Kepictronics

USA . 306,000 parts In-Stock

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Perfect Parts

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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GreenTree Electronics

Israel . 20,744 parts In-Stock

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Authorized Procurement Solutions

USA . 20,644 parts In-Stock

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Problanco Electronics

Mexico . 3,644 parts In-Stock

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 1,527 parts In-Stock

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UHIMA Technologies

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TANS Electronics

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Kulean Microsystems

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Overview

Discover the power and precision of the NSVF6003SB6T1G by Onsemi, a top-quality RF Small Signal Bipolar Junction Transistor (BJT) designed for ultra-high frequency band applications. With a maximum operating temperature of 150 °C and a small outline package style, this NPN transistor offers exceptional performance and reliability in amplifier circuits. Trust the expertise of Onsemi and experience seamless integration with its surface mount capability and Gull Wing terminal form. Elevate your projects with the NSVF6003SB6T1G and unlock a world of possibilities in electronics design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

Allows for easy integration into NPN transistor circuits for amplification.

Configuration: SINGLE

Simplifies the design and application of the transistor in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Enables easy mounting onto a circuit board, facilitating efficient assembly.

Terminal Form: GULL WING

Facilitates easy soldering and connection to the circuit board.

Maximum Power Dissipation (Abs) 0.8 W

Can handle higher power levels, ideal for amplifier applications.

Maximum Operating Temperature 150 °C

Can operate at higher temperatures without performance degradation, suitable for various environments.

Maximum Collector-Base Capacitance 2 pF

Low capacitance allows for faster switching speeds and improved high-frequency performance.

Nominal Transition Frequency (fT) 7000 MHz

High transition frequency enables the transistor to operate efficiently in ultra-high frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NSVF6003SB6T1G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

100

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSVF6003SB6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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