Loading...

NSVF4017SG4T1G

Onsemi

NSVF4017SG4T1G by Onsemi

NSVF4017SG4T1G by Onsemi is a NPN BJT transistor with 4 terminals, operating in X Band frequency range up to 10GHz. It has a max power dissipation of 0.45W and can handle collector-emitter voltage of 12V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 compliance.

Median Price

$0.419

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,710 parts In-Stock

1+ parts

$0.432

100+ parts

$0.260

1k+ parts

$0.185

10k+ parts

-

1,710

$0.432

$0.260

$0.185

-

Rochester

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.419

1k+ parts

$0.347

10k+ parts

$0.310

9,000

-

$0.419

$0.347

$0.310

DigiKey

USA . 4,936 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.160

4,936

-

-

-

$0.160

Flip Electronics (Authorized)

USA . 4,936 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,936

-

-

-

-

Element14

Singapore . 1,735 parts In-Stock

1+ parts

-

100+ parts

$0.493

1k+ parts

$0.351

10k+ parts

$0.341

1,735

-

$0.493

$0.351

$0.341

Chip1Stop

Japan . 1,450 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.302

10k+ parts

$0.289

1,450

-

-

$0.302

$0.289

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,173 parts In-Stock

1+ parts

$0.160

100+ parts

-

1k+ parts

-

10k+ parts

-

2,173

$0.160

-

-

-

Chip Stock

USA . 77,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

77,000

-

-

-

-

Flip Electronics

USA . 4,936 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,936

-

-

-

-

Rapid Electronics

USA . 1,450 parts In-Stock

1+ parts

-

100+ parts

$0.230

1k+ parts

-

10k+ parts

-

1,450

-

$0.230

-

-

IBS Electronics

USA . 1,450 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.263

1,450

-

-

-

$0.263

TME

Poland . 1,450 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,450

-

-

-

-

Digiode

USA . 623 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

623

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 1,735 parts In-Stock

1+ parts

$0.113

100+ parts

-

1k+ parts

-

10k+ parts

-

1,735

$0.113

-

-

-

Corohmni

South Africa . 146 parts In-Stock

1+ parts

$0.160

100+ parts

-

1k+ parts

-

10k+ parts

-

146

$0.160

-

-

-

Perfect Parts

USA . 12,163 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,163

-

-

-

-

Problanco Electronics

Mexico . 6,632 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,632

-

-

-

-

TANS Electronics

Latvia . 6,497 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,497

-

-

-

-

Kulean Microsystems

USA . 5,210 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,210

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Corphita

USA . 2,311 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,311

-

-

-

-

UHIMA Technologies

Türkiye . 673 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

673

-

-

-

-

SupplyDigital Components

Austria . 666 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

666

-

-

-

-

Overview

Unleash the power of cutting-edge technology with the NSVF4017SG4T1G by Onsemi. This high-quality RF Small Signal Bipolar Junction Transistor (BJT) is designed to amplify signals in X Band frequencies, making it perfect for a wide range of applications. With Onsemi's reputation for excellence in manufacturing, you can trust that this NPN transistor offers unmatched performance and reliability. Whether you're working on a project that requires precise amplification or looking to upgrade your existing equipment, the NSVF4017SG4T1G delivers exceptional value, benefits, and advantages to meet your needs. Elevate your work to the next level with this innovative solution from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and reliable, making the transistor suitable for various applications and ensuring a long operational life.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration makes it easy to integrate into circuits, simplifying the design process.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Surface mount capability allows for easy installation onto circuit boards, saving space and streamlining manufacturing processes.

Maximum Power Dissipation (Abs): 0.45 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring stability and reliability.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures the transistor provides consistent amplification of signals.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 12 V

The high maximum collector-emitter voltage allows for the transistor to handle higher voltages, suitable for various applications.

Nominal Transition Frequency (fT): 10000 MHz

With a high nominal transition frequency, the transistor can switch quickly between on and off states, allowing for high-speed signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NSVF4017SG4T1G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

X BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSVF4017SG4T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 9