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NSVF4009SG4T1G

Onsemi

NSVF4009SG4T1G by Onsemi

NSVF4009SG4T1G by Onsemi is a NPN RF BJT transistor with 4 terminals, suitable for amplifier applications in L Band. It has a max power dissipation of 0.12W, hFE of 50, and operates b/w -55 to 150 °C. Ideal for surface mount designs with a small outline package style.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,770 parts In-Stock

1+ parts

$0.380

100+ parts

$0.201

1k+ parts

$0.169

10k+ parts

$0.153

2,770

$0.380

$0.201

$0.169

$0.153

Mouser Electronics

USA . 2,751 parts In-Stock

1+ parts

$0.380

100+ parts

$0.186

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-

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2,751

$0.380

$0.186

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Flip Electronics (Authorized)

USA . 9,000 parts In-Stock

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9,000

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Rochester

USA . 2,620 parts In-Stock

1+ parts

-

100+ parts

$0.187

1k+ parts

$0.155

10k+ parts

$0.138

2,620

-

$0.187

$0.155

$0.138

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,519 parts In-Stock

1+ parts

$0.145

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-

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1,519

$0.145

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Vyrian

USA . 1,833 parts In-Stock

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$0.153

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1,833

$0.153

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IBS Electronics

USA . 30 parts In-Stock

1+ parts

$0.637

100+ parts

$0.468

1k+ parts

$0.409

10k+ parts

$0.344

30

$0.637

$0.468

$0.409

$0.344

Flip Electronics

USA . 12,000 parts In-Stock

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12,000

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Distributors (Availability)

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Corphita

USA . 251 parts In-Stock

1+ parts

$0.138

100+ parts

-

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251

$0.138

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Corohmni

South Africa . 68 parts In-Stock

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$0.153

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68

$0.153

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Perfect Parts

USA . 34,653 parts In-Stock

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34,653

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SupplyDigital Components

Austria . 6,002 parts In-Stock

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6,002

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

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6,000

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Problanco Electronics

Mexico . 5,691 parts In-Stock

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5,691

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Kulean Microsystems

USA . 5,565 parts In-Stock

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5,565

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QUARKTWIN TECHNOLOGY LTD

USA . 5,367 parts In-Stock

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5,367

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Authorized Procurement Solutions

USA . 2,740 parts In-Stock

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2,740

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TANS Electronics

Latvia . 874 parts In-Stock

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874

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UHIMA Technologies

Türkiye . 170 parts In-Stock

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170

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Overview

Unleash the power of cutting-edge technology with the NSVF4009SG4T1G by Onsemi. Crafted with precision and expertise, this RF Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in amplifier applications. With a durable plastic/epoxy package body material and NPN polarity, this transistor guarantees reliability and efficiency. Whether you're delving into the world of electronics or seeking to enhance your existing projects, the NSVF4009SG4T1G is your ultimate solution. Experience seamless connectivity and superior functionality like never before with this innovative product from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Offers efficient amplification capabilities for various electronic applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in different projects.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high performance in audio and signal processing applications.

No. of Terminals: 4

Allows for versatile connectivity options, enhancing the flexibility in circuit configurations.

Minimum DC Current Gain (hFE): 50

Provides strong amplification capabilities with a minimal input current, ideal for low-power applications.

Maximum Collector-Emitter Voltage: 3.5 V

Maintains a safe operating range for voltage inputs, protecting the transistor from potential damage.

Maximum Operating Temperature: 150 °C

Ensures stability and reliability in high-temperature environments, making it suitable for a wide range of operating conditions.

Nominal Transition Frequency (fT): 25 MHz

Offers high-frequency response capabilities, making it suitable for applications requiring fast signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NSVF4009SG4T1G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

3.5 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.12 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSVF4009SG4T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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