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MPSH81RLRM

Onsemi

MPSH81RLRM by Onsemi

MPSH81RLRM by Onsemi is a PNP RF BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 20V, operating temperature up to 150 °C, and a transition frequency of 600MHz. The package is cylindrical in shape with through-hole terminals made of tin lead for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,639 parts In-Stock

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Vyrian

USA . 1,167 parts In-Stock

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Kulean Microsystems

USA . 7,991 parts In-Stock

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Problanco Electronics

Mexico . 7,819 parts In-Stock

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SupplyDigital Components

Austria . 6,804 parts In-Stock

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TANS Electronics

Latvia . 6,032 parts In-Stock

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Corphita

USA . 1,390 parts In-Stock

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1,390

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UHIMA Technologies

Türkiye . 691 parts In-Stock

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Corohmni

South Africa . 276 parts In-Stock

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Overview

Enhance your RF signal amplification with the MPSH81RLRM by Onsemi. Manufactured with precision and expertise, this PNP BJT transistor offers unparalleled quality and reliability. Perfect for amplifier applications, this product is designed to deliver exceptional performance and efficiency. With a maximum operating temperature of 150 °C and a nominal transition frequency of 600 MHz, you can trust in the durability and effectiveness of this component. Upgrade your projects with the trusted brand of Onsemi and experience the difference in quality and value that the MPSH81RLRM brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection, making the transistor suitable for various environments.

Polarity or Channel Type: PNP

PNP type transistors are known for their high power gain and conductivity, making them ideal for amplifier circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures easier integration into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high performance and efficiency in amplifying signals.

Package Shape: ROUND

Round package shape allows for easy placement and mounting in various electronic devices.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the transistor to other components in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments.

Maximum Collector-Base Capacitance: 0.85 pF

Low collector-base capacitance minimizes signal distortion and improves overall performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 20 V

Suitable for low voltage applications, the 20V collector-emitter voltage rating ensures safe and reliable operation.

Transistor Element Material: SILICON

Silicon material provides high efficiency and reliability in signal amplification, making it a preferred choice in transistor manufacturing.

Terminal Finish: TIN LEAD

Tin lead finish on terminals ensures excellent conductivity and solderability for easy installation and connection.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency of 600 MHz enables fast signal switching and amplification, making this transistor suitable for high frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH81RLRM attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.85 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH81RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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