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BFS17,215

NXP Semiconductors

BFS17,215 by NXP Semiconductors

The NXP Semiconductors BFS17,215 is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 1600 MHz and can handle a collector-emitter voltage of 15V. This transistor is commonly used in amplifier applications due to its ultra-high frequency band capabilities.

Median Price

$2.590

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Element14

Singapore . 43 parts In-Stock

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$2.590

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$1.770

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43

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$1.770

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Component Electronics Inc.

Canada . 5 parts In-Stock

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$0.460

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$0.350

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$0.300

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Nova Conductors

Japan . 650 parts In-Stock

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$1.171

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Vyrian

USA . 10,729 parts In-Stock

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Inventory MP

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VNN

France . 2,015 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 798 parts In-Stock

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Anansix

USA . 793 parts In-Stock

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Digiode

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Bastille Electronics

Australia . 200 parts In-Stock

1+ parts

$1.171

100+ parts

$1.112

1k+ parts

$1.057

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$1.042

200

$1.171

$1.112

$1.057

$1.042

Continental Prestige Electronics

USA . 1,268 parts In-Stock

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$1.171

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$1.148

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Argo Parts USA

USA . 491 parts In-Stock

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Ampacity Inc.

Singapore . 43 parts In-Stock

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$2.200

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AZTECH Wire

Italy . 494 parts In-Stock

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Perfect Parts

USA . 11,433 parts In-Stock

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UNI Independent Distributors

Spain . 4,210 parts In-Stock

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Corphita

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Overview

Unlock the power of cutting-edge RF technology with the BFS17,215 by NXP Semiconductors. This NPN transistor offers unparalleled performance in amplification applications within the ultra-high frequency band. With a small outline package and gull wing terminals, this transistor is designed for easy integration into your projects. Trust in NXP Semiconductors' reputation for quality and innovation to deliver reliable and efficient solutions. Elevate your designs with the BFS17,215 and experience the difference in performance and reliability that only NXP Semiconductors can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to integrate into a variety of electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to implement in electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification tasks.

Surface Mount: YES

Surface-mountable design allows for easy and efficient PCB assembly, saving time and resources during manufacturing.

Maximum Power Dissipation (Abs): 0.3 W

With a high maximum power dissipation, this transistor can handle more power without overheating, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 15 V

The high maximum collector-emitter voltage rating allows for use in applications requiring higher voltage operation.

Nominal Transition Frequency (fT): 1600 MHz

With a high transition frequency, this transistor is capable of handling high-frequency signals, making it suitable for ultra-high frequency band applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS17,215 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS17,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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