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BFS17PE6433

Infineon Technologies

BFS17PE6433 by Infineon Technologies

The Infineon Technologies BFS17PE6433 is an NPN RF BJT transistor for ultra-high frequency band applications. With a max operating temp of 150°C, it offers a transition frequency of 2500 MHz and a collector-emitter voltage of 15V. Ideal for amplifier circuits, this transistor has a small outline package with gull wing terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 3,284 parts In-Stock

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3,284

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Digiode

USA . 590 parts In-Stock

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590

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Vyrian

USA . 289 parts In-Stock

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289

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Nova Conductors

Japan . 75 parts In-Stock

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75

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.550

100+ parts

$0.501

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$0.451

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270

$0.550

$0.501

$0.451

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Modulus Dynamics

Lithuania . 13,206 parts In-Stock

1+ parts

$0.776

100+ parts

$0.745

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$0.714

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13,206

$0.776

$0.745

$0.714

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Aztec Data Supply Inc.

USA . 3,659 parts In-Stock

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$0.960

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3,659

$0.960

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AZTECH Wire

Italy . 289 parts In-Stock

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$12.806

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289

$12.806

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Semicontronic

India . 1,538 parts In-Stock

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$14.050

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$13.699

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$13.628

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1,538

$14.050

$13.699

$13.628

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Andel Nordic

Denmark . 4,239 parts In-Stock

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$20.370

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$14.257

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$14.257

4,239

$20.370

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$14.257

$14.257

Ampacity Inc.

Singapore . 348 parts In-Stock

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$43.050

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348

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Microchip USA

USA . 4,130 parts In-Stock

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Argo Parts USA

USA . 2,267 parts In-Stock

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Continental Prestige Electronics

USA . 1,419 parts In-Stock

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Corphita

USA . 435 parts In-Stock

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Corohmni

South Africa . 395 parts In-Stock

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395

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Elevate your RF signal amplification with the high-quality BFS17PE6433 from Infineon Technologies. This NPN transistor offers superior performance in the ultra-high frequency band, making it ideal for a variety of amplifier applications. With a small outline package and gull wing terminals, this transistor is easy to install and use. Experience reliable and efficient signal processing with a maximum collector-emitter voltage of 15V and a nominal transition frequency of 2500 MHz. Trust in Infineon's reputation for excellence in semiconductor manufacturing and unlock the power of seamless RF signal amplification with the BFS17PE6433.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and allows for easier integration into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and reliability in amplification tasks.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and cost.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and space-saving PCB layout, ideal for applications with limited space.

Terminal Form: GULL WING

GULL WING terminals provide strong mechanical connection and are suitable for high reliability applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ultra high frequency capability allows for high-speed signal processing and communication applications.

No. of Terminals: 3

Simplified terminal configuration facilitates easy integration and wiring in electronic circuits.

Maximum Power Dissipation (Abs): 0.28 W

High power dissipation capacity ensures reliable performance and prevents overheating of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact system design.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures stable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in challenging environments.

Maximum Collector-Base Capacitance: 0.8 pF

Low collector-base capacitance ensures high-frequency stability and minimizes signal distortion.

Maximum Collector-Emitter Voltage: 15 V

Maximum collector-emitter voltage of 15V provides flexibility in voltage requirements for different applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 0.025 A

Maximum collector current of 25mA allows for handling of moderate power levels in amplification tasks.

Terminal Position: DUAL

Dual terminal position facilitates easy mounting and soldering on PCBs, ensuring secure connections.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable soldering and assembly in surface mount technology.

Nominal Transition Frequency (fT): 2500 MHz

High nominal transition frequency enables high-speed signal processing and amplification in ultra-high frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS17PE6433 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.8 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS17PE6433 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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