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MPSH17RL

Onsemi

MPSH17RL by Onsemi

MPSH17RL by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for amplifier applications in the very high-frequency band, featuring a package style of cylindrical shape with through-hole terminals. The transistor operates at a max temperature of 150 °C, making it suitable for various RF signal amplification needs.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

USA . 690 parts In-Stock

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SupplyDigital Components

Austria . 7,779 parts In-Stock

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Problanco Electronics

Mexico . 7,677 parts In-Stock

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TANS Electronics

Latvia . 4,842 parts In-Stock

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Kulean Microsystems

USA . 3,321 parts In-Stock

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Corphita

USA . 2,183 parts In-Stock

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UHIMA Technologies

Türkiye . 816 parts In-Stock

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Corohmni

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Overview

Unlock the potential of your electronic projects with the MPSH17RL by Onsemi, a premium RF Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, a trusted name in semiconductor technology, this NPN transistor offers exceptional performance and reliability for amplifier applications in the very high frequency band. With a maximum operating temperature of 150 °C and a nominal transition frequency of 800 MHz, this transistor is a game-changer for your designs. Discover the quality and value that Onsemi brings to the table with the MPSH17RL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors offer high efficiency and fast switching speeds, making them ideal for many amplifier applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to manage and troubleshoot.

Transistor Application: AMPLIFIER

Specifically designed for amplification, ensuring optimal performance in amplifier circuits.

Package Shape: ROUND

Round shape ensures ease of installation and placement in circuits.

Terminal Form: THROUGH-HOLE

Easy to solder and secure in place on a circuit board, providing a sturdy connection.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for applications requiring very high frequency operation, offering excellent performance in those scenarios.

No. of Terminals: 3

Provides the necessary connections for the transistor to function effectively in a circuit.

Package Style (Meter): CYLINDRICAL

Cylindrical package style makes it easy to handle and install, ensuring efficient usage.

Maximum Operating Temperature: 150 °C

Allows for reliable operation even in high-temperature environments, enhancing the overall robustness of the transistor.

Maximum Collector-Base Capacitance: 0.9 pF

Low collector-base capacitance minimizes signal distortion, making it ideal for high-frequency applications.

Maximum Collector-Emitter Voltage: 15 V

Can handle higher voltages, providing flexibility in circuit design and usage.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency, making them a popular choice for various applications.

Terminal Finish: TIN LEAD

Tin-lead finish provides good solderability and conductivity, ensuring solid connections in the circuit.

Terminal Position: BOTTOM

Bottom terminal position allows for easy integration into circuit boards and efficient routing of connection traces.

Nominal Transition Frequency (fT): 800 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making it suitable for demanding applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH17RL attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector-Base Capacitance:

.9 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH17RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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