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MPSH10RLRA

Onsemi

MPSH10RLRA by Onsemi

MPSH10RLRA by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.35W and fT of 650MHz. Ideal for amplifier applications, it operates in the ultra-high frequency band and has a max collector-emitter voltage of 25V.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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LWI Electronics Inc

India . 84,750 parts In-Stock

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Chip Stock

USA . 19,000 parts In-Stock

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Bristol Electronics

USA . 3,512 parts In-Stock

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Digiode

USA . 2,039 parts In-Stock

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Resion

USA . 1,965 parts In-Stock

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Atlantic Semiconductor

USA . 1,852 parts In-Stock

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Flex Direct, LLC

USA . 1,660 parts In-Stock

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Vyrian

USA . 409 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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AZTECH Wire

Italy . 568 parts In-Stock

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$15.542

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568

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Ampacity Inc.

Singapore . 1,249 parts In-Stock

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$58.050

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Kulean Microsystems

USA . 7,360 parts In-Stock

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Problanco Electronics

Mexico . 3,647 parts In-Stock

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TANS Electronics

Latvia . 3,168 parts In-Stock

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Corphita

USA . 2,489 parts In-Stock

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Argo Parts USA

USA . 2,449 parts In-Stock

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SupplyDigital Components

Austria . 2,301 parts In-Stock

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Continental Prestige Electronics

USA . 2,259 parts In-Stock

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Corohmni

South Africa . 467 parts In-Stock

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UHIMA Technologies

Türkiye . 335 parts In-Stock

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Aranea Global

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Overview

Discover the ultimate RF Small Signal BJT transistor, the MPSH10RLRA by Onsemi. With a reputation for high-quality components, Onsemi delivers top-notch performance and reliability. This NPN transistor is perfect for amplifier applications in the ultra-high-frequency band, offering customers unmatched value and benefits. Whether you're looking for exceptional power dissipation or superior DC current gain, the MPSH10RLRA is the ideal choice for your electronic projects. Trust Onsemi for cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection, making the transistor suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easy to integrate into different electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and placement in circuit boards, providing flexibility in design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring reliable performance in electronic circuits.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making it suitable for high-performance applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH10RLRA attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH10RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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