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KSC1674Y

Onsemi

KSC1674Y by Onsemi

KSC1674Y by Onsemi is an NPN BJT transistor with max VCEsat of 0.3V, hFE of 120, and fT of 600MHz. Ideal for amplifier applications in the ultra-high frequency band due to its low power dissipation and high transition frequency. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

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Vyrian

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Digiode

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Kepictronics

USA . 38,000 parts In-Stock

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GreenTree Electronics

Israel . 11,816 parts In-Stock

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TANS Electronics

Latvia . 7,432 parts In-Stock

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Austria . 6,613 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,972 parts In-Stock

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Problanco Electronics

Mexico . 5,691 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,981 parts In-Stock

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Kulean Microsystems

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Corphita

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Assy Fe

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South Africa . 329 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality KSC1674Y from Onsemi. Manufactured by a trusted brand in the industry, this RF Small Signal BJT transistor offers reliable performance and durability. Ideal for amplifier applications in the ultra-high frequency band, this NPN transistor boasts a low VCEsat of 0.3V and a minimum DC current gain of 120. With its compact cylindrical package and through-hole terminals, the KSC1674Y provides ease of installation and efficient power dissipation. Elevate your designs with this versatile component that delivers exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, offering high efficiency and low noise operation.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easy integration into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing optimal performance in signal amplification.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power dissipation and improves efficiency of the transistor.

Package Shape: ROUND

Round package shape allows for compact and efficient PCB layout, saving space in electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure strong and reliable connections with the PCB, improving overall reliability of the product.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for use in ultra high frequency applications, providing high-speed performance and wide bandwidth capabilities.

No. of Terminals: 3

Three terminals provide necessary connections for biasing and signal input/output, making it versatile for various circuit configurations.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25W, the transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers ease of handling and assembly, suitable for automated production processes.

Maximum Power Dissipation Ambient: 0.25 W

Maintaining a maximum power dissipation of 0.25W even in various ambient conditions ensures reliable performance under different operating environments.

Minimum DC Current Gain (hFE): 120

A minimum DC current gain of 120 ensures stable and reliable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can operate reliably in high-temperature environments.

Maximum Collector-Base Capacitance: 1.2 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage: 20 V

With a maximum collector-emitter voltage of 20V, the transistor can handle a wide range of voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material offers high reliability and efficiency, making the transistor suitable for long-term use in various applications.

Maximum Collector Current (IC): 0.02 A

With a maximum collector current of 0.02A, the transistor can handle moderate current levels in the circuit without saturation.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, ensuring secure connections for reliable operation.

Nominal Transition Frequency (fT): 600 MHz

High nominal transition frequency allows for high-speed signal processing and ensures reliable performance in high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC1674Y attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.2 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

120

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

KSC1674Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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