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KSC1674

Onsemi

KSC1674 by Onsemi

The Onsemi KSC1674 is an NPN RF BJT transistor with a max VCEsat of 0.3V and fT of 600MHz, ideal for amplifier applications in the very high frequency band. It has a max IC of 0.02A, hFE of 40, and operates up to 150 °C, housed in a cylindrical package with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 5,761 parts In-Stock

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Digiode

USA . 2,187 parts In-Stock

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Kepictronics

USA . 51,000 parts In-Stock

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TANS Electronics

Latvia . 7,402 parts In-Stock

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SupplyDigital Components

Austria . 3,582 parts In-Stock

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Kulean Microsystems

USA . 2,968 parts In-Stock

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Supply Digital

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Corphita

USA . 1,822 parts In-Stock

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Problanco Electronics

Mexico . 1,048 parts In-Stock

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UHIMA Technologies

Türkiye . 958 parts In-Stock

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Corohmni

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Overview

Unleash the power of innovation with the KSC1674 by Onsemi. As a leading manufacturer in RF Small Signal Bipolar Junction Transistors, Onsemi delivers unmatched quality and reliability. This NPN transistor is perfect for amplifier applications in the very high-frequency band, offering a maximum VCEsat of only 0.3V. With a minimum DC current gain of 40 and a maximum operating temperature of 150 °C, the KSC1674 provides exceptional performance and efficiency. Elevate your projects to new heights with the value and benefits this product brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

Allows for positive voltage control, making it suitable for many circuit designs.

Configuration: SINGLE

Simplified design and easy integration into circuit layouts.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in such applications.

Maximum VCEsat: 0.3 V

Low saturation voltage helps minimize power loss and improves efficiency.

Package Shape: ROUND

Compact and space-saving design for easy integration.

Terminal Form: THROUGH-HOLE

Allows for secure connections and easy soldering onto PCBs.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Ideal for applications requiring high-frequency operation, such as RF communications.

No. of Terminals: 3

Simplified connection layout and easy identification of terminals.

Maximum Power Dissipation (Abs): 0.25 W

Ability to handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Compact and efficient packaging for space-constrained applications.

Maximum Power Dissipation Ambient: 0.25 W

Ensures reliable operation under various ambient conditions.

Minimum DC Current Gain (hFE): 40

Consistent and reliable amplification characteristics.

Maximum Operating Temperature: 150 °C

Suitable for high-temperature environments without compromising performance.

Maximum Collector-Base Capacitance: 1.2 pF

Low capacitance minimizes signal distortion and interference.

Maximum Collector-Emitter Voltage: 20 V

Can withstand higher voltage levels for added robustness.

Transistor Element Material: SILICON

Reliable and widely used material for semiconductor devices.

Maximum Collector Current (IC): 0.02 A

Able to handle moderate current levels for various applications.

Terminal Position: BOTTOM

Simplified PCB layout and easy integration into existing designs.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency ideal for high-frequency signal amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC1674 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.2 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

KSC1674 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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