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MPSH11RLRA

Onsemi

MPSH11RLRA by Onsemi

MPSH11RLRA by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It operates at up to 150 °C, ideal for ultra-high frequency applications in electronics due to its low collector-base capacitance of 0.7pF. This through-hole transistor in a cylindrical package suits high-frequency band circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,373 parts In-Stock

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Digiode

USA . 868 parts In-Stock

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868

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Kulean Microsystems

USA . 6,367 parts In-Stock

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6,367

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SupplyDigital Components

Austria . 4,660 parts In-Stock

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Problanco Electronics

Mexico . 4,154 parts In-Stock

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TANS Electronics

Latvia . 2,046 parts In-Stock

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Corphita

USA . 704 parts In-Stock

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704

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UHIMA Technologies

Türkiye . 479 parts In-Stock

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479

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Corohmni

South Africa . 373 parts In-Stock

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Overview

Experience the superior performance and reliability of the MPSH11RLRA by Onsemi, a leading manufacturer in the industry. This RF Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and precision for a wide range of applications in the ultra-high frequency band. Customers can trust in the value and benefits of this NPN transistor, from its high operating temperature of 150 °C to its low collector-base capacitance of 0.7 pF. Trust Onsemi to deliver cutting-edge technology that meets your needs with the MPSH11RLRA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of signal amplification applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate the transistor into existing systems.

Package Shape: ROUND

The round shape allows for easy mounting and placement in circuits, maximizing efficiency during assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and make it easier to solder the transistor onto a circuit board.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for high-frequency applications where signal accuracy and speed are crucial.

No. of Terminals: 3

Provides the necessary connections for input, output, and grounding, ensuring proper functionality in a circuit.

Package Style: CYLINDRICAL

The cylindrical package style is compact and space-saving, making it suitable for applications with limited space.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, ensuring reliability in various operating conditions.

Maximum Collector-Base Capacitance: 0.7 pF

Low capacitance helps in reducing signal distortion and ensures high-speed performance in signal processing applications.

Maximum Collector-Emitter Voltage: 25 V

Supports a wide range of voltage levels, making it versatile for different voltage requirements in circuits.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and performance in electronic devices.

Terminal Finish: TIN LEAD

Tin-lead terminal finish facilitates easy soldering and ensures secure connections in a circuit.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting on a circuit board and ensures proper alignment during installation.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency indicates fast response time and excellent performance in high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH11RLRA attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH11RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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