Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; No. of Terminals: 4;
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Newark
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$0.597
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$0.327
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$0.278
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DigiKey
$0.680
$0.373
$0.318
Distrelec
$0.812
$0.693
$0.541
$0.498
EBV Elektronik
Arrow
$0.190
Verical
$0.186
RS (Exports)
$0.259
$0.209
Chip1Stop
Element14
$0.387
$0.202
$0.196
Farnell
$0.249
$0.228
Nova Conductors
$0.271
Digiode
$0.437
NAC Semi
$0.262
Vyrian
VNN
Bristol Electronics
Semicontronic
$0.166
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$0.161
Ampacity Inc.
Aranea Global
$0.266
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Argo Parts USA
$0.263
Corphita
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Continental Prestige Electronics
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Corohmni
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Aztec Data Supply Inc.
$1.494
Epart123
$0.310
Eastek
Perfect Parts
QUARKTWIN TECHNOLOGY LTD
Authorized Procurement Solutions
GreenTree Electronics
RF Small Signal Bipolar Junction Transistors (BJT) BFP620FH7764XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFP620FH7764XTSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Recyclable Glass Carrier 14/Oct/2014 Reel Cover Tape Chg 16/Feb/2016
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
M24308/2-1F
Souriau
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;
BAV99
Siemens
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
EU2B-YS3203C
Idec
ROTARY SWITCH;
BAT54SLT1G
Onsemi
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
MBR0520LT1G
MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.
FDC5614P
FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
STM32H743ZIT6
STMicroelectronics
STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
LM2931Z-5.0RPG
LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.
1N4148WS
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Thinking Electronic Industrial
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138K-13
Diodes Incorporated
BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
2N7002
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
CRG0805F10K
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
Grande Electronics
Renesas Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
MMBT5771
Onsemi's MMBT5771 is a PNP RF BJT transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 0.35W and max operating temp of 150 °C, it offers high performance in a small outline package. Featuring a max collector-emitter voltage of 15V and transition frequency of 700MHz, it suits various RF signal amplification needs.
MMBTH10LT1
MMBTH10LT1 by Onsemi is an NPN RF BJT transistor with a max operating temp of 150°C. It has a transition frequency of 650 MHz and a collector-emitter voltage of 25V, making it ideal for ultra-high frequency amplifier applications in small outline packages.
MPSH10
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
HFA3127BZ96
Renesas Electronics
Renesas Electronics' HFA3127BZ96 is an NPN RF BJT with 5 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 8V and a nominal transition frequency of 8000MHz. This surface-mount transistor has a small outline package with 16 terminals in gull-wing form.
934064589115
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 55000 MHz; Maximum Collector Current (IC): .04 A; Maximum Collector-Emitter Voltage: 2.8 V;
BF224RL1
BF224RL1 by Onsemi is a NPN RF BJT with max. 30V VCE, 0.05A IC, and 850MHz fT. Ideal for very high frequency band applications due to its single configuration and cylindrical package style. Operates up to 150 °C with through-hole terminals for easy installation.
SD1080-2
NPN; Surface Mount: YES; JESD-609 Code: e0; Transistor Element Material: SILICON; Terminal Finish: Tin/Lead (Sn/Pb);
2SC2814
Onsemi's 2SC2814 is an NPN RF BJT with a max fT of 320 MHz. It has a Pd of 0.15 W and Vceo of 20V, ideal for amplifier applications in the VHF band. The transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.
HFA3101BZ96
HFA3101BZ96 by Renesas Electronics is an NPN bipolar junction transistor (BJT) designed for amplifier applications in the ultra high frequency band. With a max operating temperature of 150°C and a max collector-emitter voltage of 8V, it offers a nominal transition frequency of 10,000 MHz.
SD1219-5
NPN; Surface Mount: NO; Transistor Element Material: SILICON;
MMBTH10-4LT1
MMBTH10-4LT1 by Onsemi is an NPN RF BJT with a max fT of 800 MHz. It has a max IC of 0.025 A and hFE of 120, suitable for UHF applications. This small outline transistor operates up to 150 °C, making it ideal for high-frequency circuits in compact designs.
BFP620FH7764XTSA1
Infineon Technologies
BFP620FH7764XTSA1 by Infineon Technologies is an NPN RF BJT transistor with a max fT of 65 GHz. It features a collector-emitter voltage of 2.3V and a collector current of 0.08A, making it suitable for high-frequency amplifier applications in the C band. This small outline package transistor has 4 terminals and complies with AEC-Q101 standards.
2N2907A
Space Power Electronics
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BFQ256A-TAPE-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .3 A; No. of Terminals: 4;
MPS3563
MPS3563 by Onsemi is an NPN RF BJT transistor with a max fT of 1500 MHz. It has a max IC of 0.05A and Ptot of 0.625W, making it suitable for ultra-high frequency amplifier applications. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
BFS17NTA
Diodes Incorporated's BFS17NTA is an NPN BJT transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 0.33W and max operating temp of 150°C, it offers a transition frequency of 3200MHz. Its small outline package makes it suitable for surface mount designs in RF circuits.
BFU550WX
The NXP Semiconductors BFU550WX is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max collector-emitter voltage of 12V, fT of 11GHz, and can handle a max collector current of 0.05A.
BFG425W,115
BFG425W,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is designed for switching applications in the L Band frequency range up to 25 GHz. This surface mount transistor has a max power dissipation of 0.135 W and can handle a max collector current of 0.03 A.
BF959RL1G
BF959RL1G by Onsemi is a NPN BJT transistor with 3 terminals. It operates in the very high frequency band up to 700 MHz, making it suitable for amplifier applications. With a max power dissipation of 1.5W and a collector-emitter voltage of 20V, it can handle various RF signal amplification tasks efficiently.
C-33
ROHM
ROHM C-33 is an NPN BJT transistor for amplifier applications. Features include VCEsat of 0.4V, Gp of 15dB, and hFE of 20. Operating at up to 150°C, it has a fT of 1000MHz and can handle IC up to 0.05A in the UHF band.
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BFP650FH6327XTSA1
RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
BFP650H6327XTSA1
BFP650H6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for X Band applications. It has a max fT of 42 GHz, max IC of 0.15 A, and max VCE of 4 V. Ideal for amplifier circuits in high-frequency communication systems due to its silicon germanium carbon element material.
BFP640ESDH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON GERMANIUM CARBON;
BFP640H6327XTSA1
BFP640H6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for C band applications. It has a max fT of 40 GHz, IC of 0.05 A, and VCE of 4 V. Ideal for amplifier circuits in high-frequency communication systems due to its small outline package and silicon germanium material.
BFP640FESDH6327XTSA1
BFP640FESDH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4.1V VCE, 0.05A IC, and fT of 46GHz. It is used for X Band amplifier applications in automotive electronics, meeting AEC-Q101 standards. This surface-mount device has a small outline package with 4 terminals and silicon germanium carbon element material.
BFP640FH6327XTSA1
BFP640FH6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for C Band applications. It has a max fT of 40 GHz, 0.05 A IC, and 4 V VCE. This transistor is designed for high-frequency amplifier circuits in automotive electronics.
BFP620H7764XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; Maximum Collector-Emitter Voltage: 2.3 V;
BFP620FE7764
BFP620FE7764 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating in the C band up to 65 GHz. It has a max collector-emitter voltage of 2.3V and collector current of 0.08A, making it suitable for high-frequency applications like wireless communication systems. The package is surface mountable with a small outline shape and matte tin finish.
BFP640F-E6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BFP640FE6327HTSA1
RF Small Signal Bipolar Transistors;
BFP640FE6327XT
BFP640F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BFP620FE7764HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; Transistor Element Material: SILICON GERMANIUM;
BFP620E7764HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; Package Style (Meter): SMALL OUTLINE;
BFP640FESD
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 46000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BFP620_E6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Power Dissipation (Abs): .185 W; Maximum Collector Current (IC): .08 A;
BFP620F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; Terminal Finish: TIN;
BFP640
BFP640_E_L6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40000 MHz; Maximum Collector Current (IC): .05 A; Terminal Position: DUAL;
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