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MPSH17G

Onsemi

MPSH17G by Onsemi

The Onsemi MPSH17G is an NPN RF BJT transistor with a max fT of 800 MHz. It has a max Vce of 15V and Pd of 0.625W, suitable for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals, ideal for high-speed circuit designs.

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Italy . 877 parts In-Stock

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Component Stockers USA

USA . 359 parts In-Stock

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SupplyDigital Components

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A-Z Elektronik GmbH

Germany . 6,140 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

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Overview

Enhance your electronic devices with the high-quality MPSH17G RF Small Signal Bipolar Junction Transistor by Onsemi. This NPN transistor boasts a very high frequency band, making it perfect for amplifier applications. With a maximum power dissipation of 0.625W and a nominal transition frequency of 800MHz, this transistor offers exceptional performance and reliability. Upgrade your projects with the trusted manufacturer, Onsemi, and experience the superior value and benefits that the MPSH17G provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Allows for amplification of signals in electronic circuits.

Configuration: SINGLE

Simplified design with single configuration for ease of use.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring high performance in amplifier circuits.

Package Shape: ROUND

Compact round shape for space-saving and efficient circuit design.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure mounting on circuit boards.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Capable of operating in very high frequency ranges for advanced applications.

Maximum Power Dissipation (Abs): 0.625 W

Can handle high power dissipation, ensuring reliability under demanding conditions.

Package Style (Meter): CYLINDRICAL

Cylindrical package style for efficient heat dissipation and compact design.

Minimum DC Current Gain (hFE): 25

Provides consistent amplification capability with a minimum gain of 25.

Maximum Operating Temperature: 150 °C

Suitable for operation in high-temperature environments up to 150 °C.

Maximum Collector-Base Capacitance: 0.9 pF

Low collector-base capacitance for minimal signal distortion and improved performance.

Maximum Collector-Emitter Voltage: 15 V

Supports up to 15 volts of collector-emitter voltage for versatile applications.

Transistor Element Material: SILICON

Utilizes silicon material known for its reliability and efficiency in transistor applications.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish for secure connections and enhanced conductivity.

Terminal Position: BOTTOM

Bottom terminal position for easy integration into circuit layouts.

Peak Reflow Temperature °C: 260

Can withstand peak reflow temperatures of up to 260 °C during manufacturing processes.

Nominal Transition Frequency (fT): 800 MHz

High transition frequency of 800 MHz for fast switching and high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH17G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.9 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH17G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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