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START540

STMicroelectronics

START540 by STMicroelectronics

START540 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector current of 40 mA, operates up to 150 °C, and boasts a nominal transition frequency of 45 GHz. Its compact surface mount design ensures efficient performance in C band communications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,486 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,486

-

-

-

-

Anansix

USA . 2,471 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,471

-

-

-

-

Vyrian

USA . 387 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

387

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,869 parts In-Stock

1+ parts

$0.416

100+ parts

-

1k+ parts

$0.374

10k+ parts

-

1,869

$0.416

-

$0.374

-

MKK Technologies

India . 1,065 parts In-Stock

1+ parts

$0.782

100+ parts

-

1k+ parts

-

10k+ parts

-

1,065

$0.782

-

-

-

DigiPath Technology Company

USA . 1,065 parts In-Stock

1+ parts

$0.782

100+ parts

-

1k+ parts

-

10k+ parts

-

1,065

$0.782

-

-

-

Kepictronics

USA . 306,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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306,000

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-

-

-

Corphita

USA . 1,654 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

1,654

-

-

-

-

Parana Technologies

USA . 263 parts In-Stock

1+ parts

-

100+ parts

$0.497

1k+ parts

-

10k+ parts

-

263

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$0.497

-

-

Overview

Unlock unparalleled performance with the START540 by STMicroelectronics, a high-quality RF Small Signal BJT designed for superior amplification. This NPN transistor offers exceptional reliability and efficiency, making it ideal for innovative applications in telecommunications and consumer electronics. With STMicroelectronics’ renowned commitment to excellence, the START540 ensures optimal signal quality and durability, empowering your projects to achieve remarkable results. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides excellent protection against environmental factors, enhancing the reliability and lifespan of the transistor.

Polarity: NPN

Being an NPN transistor makes this device suitable for a variety of applications, including amplifiers, enhancing its versatility in circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to implement in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor delivers strong performance in audio and signal processing applications.

Surface Mount: YES

The surface mount capability allows for a compact PCB design and easier automated assembly processes, improving manufacturability.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB, allowing for denser circuit layouts and more efficient use of board real estate.

Terminal Form: GULL WING

Gull wing terminals provide a robust mechanical connection and facilitate easy soldering, enhancing ease of assembly and reliability.

Highest Frequency Band: C BAND

Operating in the C band makes this transistor suitable for RF applications, ideal for communication and satellite systems.

No. of Terminals: 4

With four terminals, this transistor supports efficient circuit connectivity and versatile configurations for various applications.

Package Style (Meter): SMALL OUTLINE

The small outline packaging enhances the density of circuit designs, making it suitable for compact devices.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures that this transistor can perform reliably in harsh environments.

Maximum Collector-Emitter Voltage: 4.5 V

The low maximum collector-emitter voltage makes this transistor ideal for low-voltage applications, ensuring safe operation in sensitive circuits.

Transistor Element Material: SILICON

Silicon provides excellent electrical properties and reliability, making this transistor effective for a variety of electronic applications.

Maximum Collector Current (IC): 0.04 A

With a collector current of 40 mA, this transistor is capable of handling a range of signal amplification tasks effectively.

Terminal Position: DUAL

The dual terminal position enhances ease of integration on PCBs and supports flexible circuit design strategies.

Case Connection: EMITTER

An emitter case connection allows for straightforward integration into circuits, simplifying design and assembly processes.

Nominal Transition Frequency (fT): 45000 MHz

A high nominal transition frequency of 45 GHz indicates that this transistor can operate effectively at high frequencies, suitable for advanced RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) START540 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

LOW NOISE

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

START540 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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