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START450

STMicroelectronics

START450 by STMicroelectronics

START450 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.45 W, operates up to 150 °C, and supports frequencies in the C band with a nominal transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,803 parts In-Stock

1+ parts

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1,803

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Anansix

USA . 1,571 parts In-Stock

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1,571

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Digiode

USA . 425 parts In-Stock

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425

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,799 parts In-Stock

1+ parts

$0.996

100+ parts

-

1k+ parts

$0.897

10k+ parts

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1,799

$0.996

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$0.897

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MKK Technologies

India . 216 parts In-Stock

1+ parts

$1.874

100+ parts

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216

$1.874

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DigiPath Technology Company

USA . 216 parts In-Stock

1+ parts

$1.874

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216

$1.874

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Parana Technologies

USA . 2,298 parts In-Stock

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$1.191

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2,298

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$1.191

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Corphita

USA . 2,126 parts In-Stock

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2,126

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Overview

Elevate your designs with the START450 by STMicroelectronics, a top-tier choice in RF Small Signal BJTs. Renowned for their exceptional quality and reliability, STMicroelectronics offers this NPN transistor that excels in amplifier applications across a range of industries. With its compact surface-mount design, the START450 ensures seamless integration into your projects, delivering outstanding performance and efficiency while helping you create innovative solutions that meet demanding requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures excellent protection against environmental factors, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly utilized for high-speed switching and amplification, making this transistor effective for numerous RF applications.

Configuration: SINGLE

A single configuration allows for simpler circuit designs, making it easier to integrate into RF applications without complicating the layout.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor excels in enhancing signal strength in RF applications.

Surface Mount: YES

Surface mount technology allows for a compact design, making it suitable for modern high-density circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient space utilization in PCBs, promoting better design flexibility.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improved reliability in the mounting process.

Highest Frequency Band: C BAND

Operating in the C band makes this transistor ideal for applications such as radar and satellite communications.

No. of Terminals: 4

The four-terminal design offers essential connection points for stable and reliable operation of the transistor.

Maximum Power Dissipation (Abs): 0.45 W

A maximum power dissipation of 0.45 W ensures that the transistor can handle significant power without overheating, enhancing longevity.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for efficient space management on PCBs, enabling tighter component placements.

Minimum DC Current Gain (hFE): 50

A minimum hFE of 50 ensures good amplification efficiency, making this transistor capable of providing significant signal enhancement.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures means this transistor is durable and reliable in demanding environments.

Maximum Collector-Emitter Voltage: 4.5 V

With a maximum collector-emitter voltage of 4.5 V, this transistor is safe to use in low-voltage applications, minimizing risk in sensitive circuits.

Transistor Element Material: SILICON

Silicon as the material provides superior thermal stability and performance efficiency, which are crucial in RF applications.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1 A makes this transistor suitable for small-signal applications while maintaining good performance.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and corrosion resistance, contributing to improved reliability in connections.

Terminal Position: DUAL

Dual terminal positioning allows for better placement flexibility within circuits, aiding in easier integration.

Case Connection: EMITTER

Emitter case connection provides efficient heat dissipation, reducing thermal buildup during operation.

Nominal Transition Frequency (fT): 42000 MHz

A high transition frequency of 42000 MHz makes this transistor suitable for applications requiring high-speed signal amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) START450 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

START450 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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