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START499TR

STMicroelectronics

START499TR by STMicroelectronics

START499TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.9 W and operating temp up to 150 °C. It supports ultra-high frequency with a transition frequency of 42 GHz. This compact surface mount transistor ensures efficient performance in small electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,842 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,842

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-

-

-

Anansix

USA . 2,462 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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2,462

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Digiode

USA . 263 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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263

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,937 parts In-Stock

1+ parts

$0.620

100+ parts

-

1k+ parts

$0.558

10k+ parts

-

1,937

$0.620

-

$0.558

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MKK Technologies

India . 1,409 parts In-Stock

1+ parts

$1.166

100+ parts

-

1k+ parts

-

10k+ parts

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1,409

$1.166

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DigiPath Technology Company

USA . 1,409 parts In-Stock

1+ parts

$1.166

100+ parts

-

1k+ parts

-

10k+ parts

-

1,409

$1.166

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Kepictronics

USA . 27,000 parts In-Stock

1+ parts

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27,000

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Corphita

USA . 3,668 parts In-Stock

1+ parts

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100+ parts

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3,668

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Parana Technologies

USA . 753 parts In-Stock

1+ parts

-

100+ parts

$0.741

1k+ parts

-

10k+ parts

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753

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$0.741

-

-

Overview

Unlock the potential of your projects with the START499TR from STMicroelectronics, a trusted leader in innovation. Designed for exceptional performance in RF applications, this NPN bipolar junction transistor delivers superior amplification in ultra-high frequency ranges. Its compact, surface-mount design ensures seamless integration, while its robust construction stands up to demanding environments. Experience reliability and efficiency that elevate your designs to the next level!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection against environmental factors, making this transistor suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration is widely used in digital and analog circuits, providing versatility and compatibility in a range of electronic designs.

Configuration: SINGLE

Single configuration simplifies integration into circuits, allowing for easier design and implementation in various electronic systems.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this BJT delivers excellent signal amplification, making it ideal for audio and RF applications.

Surface Mount: YES

Surface mount capability allows for compact PCB designs and automated assembly, enhancing production efficiency and reducing overall footprint.

Package Shape: RECTANGULAR

The rectangular package shape provides efficient use of board space and simplifies thermal management in electronic designs.

Terminal Form: GULL WING

Gull wing terminal form facilitates reliable soldering and ensures a secure connection to the PCB, improving overall product reliability.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band makes this transistor suitable for high-speed applications such as wireless communication and RF circuits.

No. of Terminals: 4

Four terminals offer flexibility in circuit design, enabling more complex configurations and the ability to handle mixed signals.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9 W, this transistor can operate efficiently without overheating, ensuring reliable performance in demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports compact designs, allowing for use in space-constrained applications without sacrificing performance.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliability in high-temperature environments, making it suitable for automotive and industrial applications.

Maximum Collector-Emitter Voltage: 4.5 V

With a maximum collector-emitter voltage of 4.5 V, this transistor provides stable performance for low-voltage applications, ensuring safety and efficiency.

Transistor Element Material: SILICON

Silicon is a standard material for BJTs, offering good thermal stability and electrical performance, making it a reliable choice for general applications.

Maximum Collector Current (IC): 0.6 A

A maximum collector current of 0.6 A allows this BJT to handle moderate current loads, suitable for driving small loads in low-power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability in various environments.

Terminal Position: DUAL

Dual terminal position enhances layout flexibility and allows for better thermal management in electronic circuit designs.

Case Connection: EMITTER

Emitter case connection simplifies integration into amplifier circuits, facilitating easier design and providing good thermal conductance.

Nominal Transition Frequency (fT): 42000 MHz

A nominal transition frequency of 42,000 MHz indicates high-speed operation capability, making it suitable for RF and high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) START499TR attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH EFFICIENCY

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

START499TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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