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KSC1674R

Onsemi

KSC1674R by Onsemi

KSC1674R by Onsemi is an NPN BJT transistor for RF applications. It features a low VCEsat of 0.3V, hFE of 40, and fT of 600MHz. Ideal for amplifiers in the ultra-high frequency band with a max operating temp of 150 °C.

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Vyrian

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Latvia . 3,256 parts In-Stock

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Supply Digital

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Kulean Microsystems

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Problanco Electronics

Mexico . 2,293 parts In-Stock

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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Overview

Enhance your RF amplifier designs with the KSC1674R by Onsemi. Crafted from high-quality materials, this NPN transistor offers unparalleled performance in the ultra-high frequency band. With a maximum VCEsat of just 0.3V and a minimum DC current gain of 40, this transistor provides exceptional power dissipation and reliability. Ideal for a range of applications, including amplifiers, the KSC1674R guarantees superior functionality and efficiency. Elevate your projects with this top-tier component from Onsemi and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration in circuits and offers versatile performance in amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and layout of the circuit, making it easier to work with in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers optimized performance for amplifying signals.

Maximum VCEsat: 0.3 V

The low maximum VCEsat value of 0.3 V helps in reducing power losses and improving efficiency in amplifier circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and handling in various printed circuit board layouts.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and reliable connection in circuit boards, ensuring stable performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band, this transistor is suitable for high-frequency amplifier applications.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in various circuit configurations and connections.

Maximum Power Dissipation (Abs): 0.25 W

The maximum power dissipation of 0.25 W ensures reliable operation and thermal management in amplifier circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and space-efficient design for the transistor in amplifier applications.

Maximum Power Dissipation Ambient: 0.25 W

The maximum power dissipation in ambient conditions of 0.25 W ensures stable performance under varying environmental conditions.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor offers consistent and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures in amplifier applications.

Maximum Collector-Base Capacitance: 1.2 pF

The low maximum collector-base capacitance of 1.2 pF ensures minimal interference and distortion in amplifier applications.

Maximum Collector-Emitter Voltage: 20 V

The maximum collector-emitter voltage of 20 V allows for reliable operation in amplifier circuits within safe voltage limits.

Transistor Element Material: SILICON

Made of silicon, this transistor offers high performance, reliability, and efficiency in amplifier applications.

Maximum Collector Current (IC): 0.02 A

The maximum collector current of 0.02 A allows for efficient amplification of signals with low power consumption.

Terminal Position: BOTTOM

With the terminal position at the bottom, this transistor can be easily mounted and connected in amplifier circuits.

Nominal Transition Frequency (fT): 600 MHz

The high nominal transition frequency of 600 MHz enables fast signal amplification and response in amplifier applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC1674R attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.2 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

KSC1674R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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