Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BF959RLRM by Onsemi is a NPN RF BJT with 700MHz fT. Operating at 150 °C, it has VCE of 20V and IC of 0.1A. Ideal for very high frequency applications due to its single configuration and cylindrical package style.
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This material provides good insulation and protection for the transistor, ensuring reliable performance.
NPN transistors are commonly used in amplification and switching applications, offering versatility.
Single configuration transistors are easy to use and provide a straightforward interface for circuit design.
Through-hole terminals are convenient for soldering and provide secure connections in electronic circuits.
Transistors designed for very high frequency bands are suitable for high-speed applications such as RF communication.
A three-terminal configuration allows for easy interfacing with external circuits and efficient use in various applications.
The cylindrical package style offers compact design and easy integration into circuits with limited space.
With a high maximum operating temperature, this transistor can withstand elevated temperatures and maintain performance.
A high collector-emitter voltage rating allows for use in a wide range of voltage requirements without risking damage.
Silicon transistors offer high performance, efficiency, and reliability, making them a popular choice in electronics.
With a maximum collector current of 0.1 A, this transistor is suitable for low to medium current applications.
Tin-lead finish on the terminals ensures good conductivity and reliable solder joints for stable operation.
Bottom terminal position makes it easy to mount and solder the transistor on circuit boards, optimizing space usage.
A high nominal transition frequency indicates excellent high-frequency performance for RF amplifier and switching applications.
RF Small Signal Bipolar Junction Transistors (BJT) BF959RLRM attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
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JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
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Transistor Element Material:
Nominal Transition Frequency (fT):
BF959RLRM Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
M39029/58-360
Positronic Industries
CONNECTOR ACCESSORY; MIL-Connector Accessory Name: CONTACT; DIN Conformity: NO; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354; Contact Type: CRIMP REAR RELEASE;
BSS123-7-F
Diodes Incorporated
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
LL4148
General Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
MBR0520LT1G
Onsemi
MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;
2N2222A
Semicoa
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
International Devices
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
Promax-johnton
LM317T
Bay Linear
Other Regulators; No. of Terminals: 3; No. of Outputs: 1; Surface Mount: NO; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel;
BAT54C-7-F
BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.
DS18B20Z
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;
BAV99LT1G
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
STM32F405RGT6TR
STMicroelectronics
STM32F405RGT6TR by STMicroelectronics is a 32-bit microcontroller with 64 terminals, operating at a max frequency of 26 MHz. It features DAC and ADC channels, along with DMA support. Ideal for industrial applications requiring low power consumption and high-speed processing capabilities.
CRCW04020000Z0ED
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.
SMBJ18CA
Bourns
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138NH6327XTSA2
Infineon Technologies
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
IRLML6401TRPBF
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
2N7002,215
NXP Semiconductors
2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
USB2514BI-AEZG
Standard Microsystems
BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;
MMBTH10
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
BFP650H6327XTSA1
BFP650H6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for X Band applications. It has a max fT of 42 GHz, max IC of 0.15 A, and max VCE of 4 V. Ideal for amplifier circuits in high-frequency communication systems due to its silicon germanium carbon element material.
NSVMMBTH81LT1G
NSVMMBTH81LT1G by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the very high-frequency band with a max fT of 600 MHz. With a VCEsat of 0.5V and hFE of 60, it offers efficient performance in small outline packages.
55GN01CA-TB-EX
55GN01CA-TB-EX by Onsemi is an NPN RF BJT with a max fT of 5500 MHz. It has a max Vce of 10V and Ic of 0.07A, making it ideal for C Band amplifier applications. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly at temperatures up to 150 °C.
CA3083M96
Harris Semiconductor
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G16;
BFR98
BFR98 by STMicroelectronics is a NPN RF BJT transistor with single configuration for amplifier applications. It has a max VCEsat of 0.5V, operates in the very high frequency band up to 500MHz, and can handle a collector current of 0.5A.
50A02CH-TL-E
RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;
MPSH10
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
934064615115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .07 A; Additional Features: LOW NOISE;
BFT93W,115
The NXP BFT93W,115 is a PNP RF BJT transistor with 3 terminals and a max power dissipation of 0.3 W. It operates in the L band with a transition frequency of 4000 MHz, making it ideal for amplifier applications in high-frequency circuits. The small outline package and surface-mount capability enhance its versatility in compact electronic designs.
2N2222
2N3569
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BFR93AR
Vishay Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;
MMBTH81LT1
Motorola
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MPSH11RL1
MPSH11RL1 by Onsemi is an NPN RF BJT with 3 terminals, operating at a max temp of 150 °C. It has a fT of 650 MHz and Vce(max) of 25V, suitable for ultra-high frequency applications due to its low collector-base capacitance of 0.7 pF.
2SC4399-3
RF Small Signal Bipolar Transistors;
BSX28
BSX28 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 175 °C, and supports a collector current of 0.5 A. Its compact cylindrical package ensures efficient performance in various electronic circuits.
BFT92W
The NXP Semiconductors BFT92W is a PNP RF BJT transistor with a max power dissipation of 0.3 W and a transition frequency of 4000 MHz. It is designed for amplifier applications in the L band, featuring a small outline package with gull wing terminals for surface mount assembly.
BFT92E6327
Siemens
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G3;
SD1438-2
NPN; Surface Mount: NO; Transistor Element Material: SILICON; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
BF959
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BF959G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .1 A;
BF959RL
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE;
BF959RL1
BF959RL1G
BF959RLRA
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 20 V;
BF959RLRE
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .1 A; JEDEC-95 Code: TO-92;
BF959ZL1
BF959ZL1G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .1 A; Package Shape: ROUND;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
BF959RLRB
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): CYLINDRICAL;
BF959RLRF
BF959RLRM
BF959RLRP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .1 A; Maximum VCEsat: 1 V;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: AMPLIFIER;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .03 A;
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