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BFU550AVL

NXP Semiconductors

BFU550AVL by NXP Semiconductors

The NXP Semiconductors BFU550AVL is a RF Small Signal BJT transistor with NPN polarity. It is a single configuration amplifier, suitable for L Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 11 GHz, it offers high performance in a small outline package.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 9,683 parts In-Stock

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$0.460

100+ parts

$0.218

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$0.115

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$0.080

9,683

$0.460

$0.218

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$0.080

Arrow

USA . 20,000 parts In-Stock

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$0.081

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Verical

USA . 10,000 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Digiode

USA . 1,094 parts In-Stock

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Vyrian

USA . 12,754 parts In-Stock

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Flip Electronics

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VNN

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Anansix

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Ampacity Inc.

Singapore . 13,116 parts In-Stock

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$0.069

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Continental Prestige Electronics

USA . 4,015 parts In-Stock

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Argo Parts USA

USA . 2,160 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Corphita

USA . 3,857 parts In-Stock

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Kepictronics

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Overview

Experience the next level of quality and performance with the BFU550AVL by NXP Semiconductors. As a leading manufacturer in RF Small Signal Bipolar Junction Transistors, NXP delivers unmatched reliability and innovation. Whether you're amplifying signals or pushing the boundaries of L Band frequencies, this single configuration NPN transistor is your go-to solution. With its small outline package, gull wing terminals, and high transition frequency of 11,000 MHz, it offers maximum power dissipation of 0.45 W and a collector-emitter voltage of 16 V. Take advantage of NXP's expertise and elevate your applications to new heights with the BFU550AVL. Upgrade now and experience the difference for yourself!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and ensures the transistor is well-protected.

Polarity or Channel Type: NPN

NPN type allows for easy integration into circuits and compatibility with other components.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: AMPLIFIER

Optimized for amplifier applications, ensuring reliable and efficient performance.

Surface Mount: YES

Surface mount capability makes installation and assembly easier and more convenient.

Package Shape: RECTANGULAR

Rectangular shape offers versatility in mounting options and compatibility with various PCB layouts.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and efficient heat dissipation.

Highest Frequency Band: L BAND

Designed for high-frequency applications in the L band, ensuring optimal performance in this frequency range.

No. of Terminals: 3

3 terminals allow for simple and straightforward connections in circuits.

Maximum Power Dissipation (Abs): 0.45 W

High power dissipation capability ensures reliable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables compact designs.

Minimum DC Current Gain (hFE): 60

Minimum DC current gain of 60 ensures stable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in a wide range of environments.

Maximum Collector-Base Capacitance: 0.74 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 16 V

High collector-emitter voltage rating provides a wide voltage handling capability.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance in semiconductor applications.

Minimum Operating Temperature: -40 °C

Wide minimum operating temperature range enables operation in extreme cold conditions.

Maximum Collector Current (IC): 0.08 A

Maximum collector current of 0.08 A allows for higher power handling capability.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

30-second maximum time at peak reflow temperature ensures efficient soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable and robust solder connections.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability in automotive and electronic applications.

Nominal Transition Frequency (fT): 11000 MHz

High transition frequency of 11000 MHz allows for fast switching and high-frequency operation.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFU550AVL attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.74 pF

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFU550AVL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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