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2SC4104

Onsemi

2SC4104 by Onsemi

The Onsemi 2SC4104 is an NPN RF BJT transistor with a max VCEsat of 0.5V and hFE of 60, ideal for switching applications. It has a max IC of 0.05A, fT of 700MHz, and operates up to 150 °C. This small outline transistor in plastic/epoxy package with gull wing terminals is suitable for surface mount designs.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,279 parts In-Stock

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Vyrian

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Native Components

USA . 876 parts In-Stock

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$31.790

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$30.518

876

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$30.518

Northwest PG Solutions

USA . 1,898 parts In-Stock

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$34.969

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Kepictronics

USA . 306,000 parts In-Stock

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SupplyDigital Components

Austria . 7,232 parts In-Stock

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Problanco Electronics

Mexico . 6,872 parts In-Stock

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TANS Electronics

Latvia . 5,285 parts In-Stock

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Corphita

USA . 581 parts In-Stock

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Corohmni

South Africa . 477 parts In-Stock

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UHIMA Technologies

Türkiye . 221 parts In-Stock

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Kulean Microsystems

USA . 133 parts In-Stock

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Overview

Elevate your RF small signal applications with the high-quality 2SC4104 by Onsemi. From its NPN configuration to its gull wing terminal form, this transistor is designed for top-notch switching performance in a compact package. With a low VCEsat of 0.5V and a nominal transition frequency of 700MHz, this transistor offers unmatched value for your projects. Trust Onsemi's expertise in manufacturing to deliver superior performance and reliability, making the 2SC4104 the perfect choice for your next RF project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance in various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and fast switching operations.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Maximum VCEsat: 0.5 V

Low collector-emitter saturation voltage helps minimize power loss and improve efficiency in switching applications.

Maximum Power Dissipation (Abs): 0.2 W

Sufficient power handling capability for most small signal applications, ensuring reliable performance under normal operating conditions.

Maximum Collector-Emitter Voltage: 60 V

Adequate voltage rating for various electronic circuit designs, providing flexibility and compatibility with different applications.

Nominal Transition Frequency (fT): 700 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making it suitable for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC4104 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.3 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

2SC4104 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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