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2SC4215-OTE85L

Toshiba

2SC4215-OTE85L by Toshiba

The Toshiba 2SC4215-OTE85L is a NPN RF BJT transistor with a power gain of 17 dB and transition frequency of 550 MHz. It is used as an amplifier in very high-frequency applications, featuring a max operating temperature of 125°C and collector-emitter voltage of 30V.

Median Price

$0.141

Lifecycle Status

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4

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1k+

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Nova Conductors

Japan . 35 parts In-Stock

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$0.141

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Vyrian

USA . 845 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 443 parts In-Stock

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VNN

France . 87 parts In-Stock

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AZTECH Wire

Italy . 612 parts In-Stock

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$5.147

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Ampacity Inc.

Singapore . 1,031 parts In-Stock

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$18.050

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Robosynatics

Brazil . 500 parts In-Stock

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$3.000

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$2.778

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$2.778

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$2.778

Netroflash

USA . 100 parts In-Stock

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$0.138

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$0.134

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$0.131

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Overview

Upgrade your electronic projects with the 2SC4215-OTE85L by Toshiba, a high-quality RF Small Signal Bipolar Junction Transistor tailored for amplifier applications. With a very high frequency band and impressive power gain, this NPN transistor offers superior performance and reliability. Its small outline package and gull wing terminals make it ideal for surface mount applications. Trust Toshiba's expertise in semiconductor technology to deliver excellent value and unmatched benefits to your designs. Experience the difference with the 2SC4215-OTE85L today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and layout, making integration into amplifier circuits easier.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Allows for easy and efficient PCB assembly, reducing manufacturing costs and time.

Minimum Power Gain (Gp): 17 dB

Provides a high level of amplification, making this transistor suitable for applications requiring significant signal amplification.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on PCBs, optimizing space utilization and layout design.

Terminal Form: GULL WING

Enables reliable and secure contact with the PCB, ensuring consistent electrical connections.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for applications requiring high-frequency operation, such as radio frequency circuits and communications systems.

No. of Terminals: 3

Simplifies connection and integration into circuits, reducing complexity in circuit design.

Maximum Power Dissipation (Abs): 0.1 W

Can handle moderate power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Compact package design saves space on the PCB, ideal for applications with size constraints.

Minimum DC Current Gain (hFE): 70

Provides consistent and stable amplification of input signals, ensuring reliable performance.

Maximum Operating Temperature: 125 °C

Can operate within a wide temperature range, suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 30 V

Suitable for applications requiring voltage amplification within the specified range.

Transistor Element Material: SILICON

Silicon transistors offer reliable performance and durability, ensuring long-term operation.

Maximum Collector Current (IC): 0.02 A

Can handle moderate levels of collector current, suitable for typical amplifier applications.

Terminal Finish: TIN LEAD

Provides a reliable and durable finish for the terminals, ensuring consistent electrical connections.

Terminal Position: DUAL

Offers flexibility in circuit design and layout, allowing for various mounting orientations.

Nominal Transition Frequency (fT): 550 MHz

Suitable for high-frequency applications, providing rapid signal amplification and response.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC4215-OTE85L attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

70

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

17 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC4215-OTE85L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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