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SMA540BTR

STMicroelectronics

SMA540BTR by STMicroelectronics

SMA540BTR by STMicroelectronics is an NPN RF small signal BJT in a rectangular surface mount package. It features a max power dissipation of 0.12 W, a collector current of 0.04 A, and is ideal for low-power amplification applications. Its gull-wing terminals ensure easy PCB integration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,611 parts In-Stock

1+ parts

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100+ parts

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3,611

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Digiode

USA . 2,747 parts In-Stock

1+ parts

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2,747

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Anansix

USA . 1,608 parts In-Stock

1+ parts

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1,608

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,408 parts In-Stock

1+ parts

$1.778

100+ parts

-

1k+ parts

$1.601

10k+ parts

-

1,408

$1.778

-

$1.601

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MKK Technologies

India . 439 parts In-Stock

1+ parts

$3.344

100+ parts

-

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439

$3.344

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DigiPath Technology Company

USA . 439 parts In-Stock

1+ parts

$3.344

100+ parts

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439

$3.344

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Corphita

USA . 3,845 parts In-Stock

1+ parts

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3,845

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Parana Technologies

USA . 1,566 parts In-Stock

1+ parts

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100+ parts

$2.126

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1,566

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$2.126

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Overview

Unlock superior performance with the SMA540BTR from STMicroelectronics, a leader in semiconductor innovation. This NPN RF small signal transistor is designed for efficiency and reliability in compact applications, ensuring seamless integration into your projects. With its sleek surface mount design and robust build, experience enhanced quality, lower noise levels, and greater power handling, making it ideal for communication systems, consumer electronics, and more. Choose STMicroelectronics for unmatched value and performance you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides excellent durability and resistance to environmental factors, making this BJT suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are versatile and widely used for signal amplification and switching applications, ensuring broad applicability in electronic circuits.

Surface Mount: YES

Surface mount capability allows for more compact designs and efficient assembly processes, making it ideal for modern PCB layouts.

Package Shape: RECTANGULAR

The rectangular shape enables efficient use of space on PCBs and simplifies integration into design layouts.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability and are ideal for automated pick-and-place assembly, enhancing reliability in production.

No. of Terminals: 4

Having 4 terminals allows for versatile circuit configurations and simplifies connections in design, leading to easier implementation in various applications.

Maximum Power Dissipation (Abs): 0.12 W

A maximum power dissipation of 0.12 W makes this BJT suitable for low power applications, thus ensuring energy efficiency.

Package Style (Meter): SMALL OUTLINE

The small outline package style is advantageous for space-constrained applications and contributes to high-density compact designs.

Transistor Element Material: SILICON

Silicon materials are standard for BJTs, providing good performance characteristics in terms of frequency response and thermal stability.

Maximum Collector Current (IC): 0.04 A

With a maximum collector current of 0.04 A, this transistor is suitable for low to moderate power applications, ensuring safe and reliable operation.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and ensures a good connection during assembly, thereby improving overall product reliability.

Terminal Position: DUAL

Dual terminal position enables easier layout in circuit designs, providing flexibility for various assembly configurations.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SMA540BTR attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SMA540BTR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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