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SMA5101

Onsemi

SMA5101 by Onsemi

SMA5101 by Onsemi is an NPN RF BJT with 4 elements and 6 terminals. It operates in KU band, with max power dissipation of 0.28W and max collector-emitter voltage of 6V. Ideal for high-frequency applications requiring small outline packages and flat terminal forms.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,604 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 7,240 parts In-Stock

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Problanco Electronics

Mexico . 6,316 parts In-Stock

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SupplyDigital Components

Austria . 5,116 parts In-Stock

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Kulean Microsystems

USA . 3,964 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 929 parts In-Stock

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Corphita

USA . 880 parts In-Stock

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Corohmni

South Africa . 300 parts In-Stock

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Kepictronics

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Overview

Unleash the power of cutting-edge technology with the SMA5101 by Onsemi. Designed to deliver superior performance in RF Small Signal BJT applications, this NPN transistor boasts a complex configuration that sets it apart from the rest. With a small outline package and high-frequency capabilities up to KU Band, this transistor is a game-changer for various electronic projects. Experience the reliability and quality that only Onsemi can provide, all while enjoying the benefits of increased power dissipation, maximum collector-emitter voltage, and dual terminal positions. Elevate your designs with the SMA5101 and unlock endless possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making it versatile for various applications.

Configuration: COMPLEX

Complex configuration allows for advanced circuit design and functionality.

Surface Mount: YES

Ease of installation onto circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

Rectangular shape fits well within circuit layouts, optimizing space usage.

Terminal Form: FLAT

Flat terminals ensure secure connections and easy soldering.

Highest Frequency Band: KU BAND

Designed for high-frequency applications, suitable for advanced communication systems.

No. of Elements: 4

Multiple elements allow for more complex circuit designs and performance capabilities.

No. of Terminals: 4

More terminals provide more connection points, enhancing versatility in circuit configurations.

Maximum Power Dissipation (Abs): 0.28 W

Efficient power dissipation ensures stable performance under various load conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on circuit boards and reduces overall footprint.

Maximum Power Dissipation Ambient: 0.28 W

Ability to dissipate power effectively even in ambient conditions, ensuring reliability.

Minimum DC Current Gain (hFE): 20

Higher minimum DC current gain provides better amplification capabilities.

Maximum Operating Temperature: 85 °C

High operating temperature range allows for use in various environments without overheating.

Maximum Collector-Emitter Voltage: 6 V

Suitable for applications requiring up to 6V collector-emitter voltage.

Transistor Element Material: SILICON

Silicon material ensures reliability and performance consistency in various operating conditions.

Minimum Operating Temperature: -40 °C

Wide temperature range from -40 °C allows for operation in extreme cold conditions.

Maximum Collector Current (IC): 0.05 A

Can handle up to 0.05A collector current, suitable for low to medium power applications.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connections and configurations.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SMA5101 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

6 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-PDSO-F6

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.28 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SMA5101 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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