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MMPQ2369

Onsemi

MMPQ2369 by Onsemi

The Onsemi MMPQ2369 is a NPN RF BJT with 4 elements, ideal for amplifier applications. It has a hFE of 40, fT of 550 MHz, and can handle up to 0.5A collector current. With a max operating temperature of 150 °C and peak reflow temp of 235°C, it's suitable for high-frequency circuits in small outline packages.

Median Price

$3.590

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 45 parts In-Stock

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$3.590

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45

$3.590

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DF Sales Co.

USA . 45 parts In-Stock

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$3.590

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45

$3.590

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A2Z Electronics, Inc.

USA . 10,654 parts In-Stock

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ECAB

Sweden . 2,750 parts In-Stock

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2,750

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Digiode

USA . 2,660 parts In-Stock

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Anansix

USA . 2,448 parts In-Stock

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Vyrian

USA . 1,831 parts In-Stock

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Bristol Electronics

USA . 348 parts In-Stock

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348

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PC Components Company LLC

USA . 340 parts In-Stock

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340

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Manoshevitz Elec. Sales

Israel . 200 parts In-Stock

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R&J Components

USA . 125 parts In-Stock

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Electronics Depot

USA . 39 parts In-Stock

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Electronic Expediters

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Prism Electronics

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ACDS - Activité Composants Distribution Service

France . 8 parts In-Stock

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Dan-Mar Components

USA . 8 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 337 parts In-Stock

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$3.590

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337

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Kulean Microsystems

USA . 7,060 parts In-Stock

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Corphita

USA . 3,250 parts In-Stock

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Problanco Electronics

Mexico . 2,841 parts In-Stock

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Supply Digital

USA . 2,334 parts In-Stock

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TANS Electronics

Latvia . 1,774 parts In-Stock

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UHIMA Technologies

Türkiye . 682 parts In-Stock

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SupplyDigital Components

Austria . 496 parts In-Stock

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Kepictronics

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Perfect Parts

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Overview

Unleash the power of cutting-edge technology with the MMPQ2369 from Onsemi. As a leading manufacturer in RF Small Signal Bipolar Junction Transistors, Onsemi delivers unrivaled quality and reliability. Ideal for amplifier applications, this NPN transistor boasts a compact design and high performance, making it a versatile choice for various projects. With a maximum operating temperature of 150 °C and a nominal transition frequency of 550 MHz, the MMPQ2369 offers exceptional value and efficiency, setting a new standard in the industry. Choose Onsemi for top-notch products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good thermal and electrical insulation, making the transistor more reliable and durable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SEPARATE, 4 ELEMENTS

Having 4 separate elements allows for more precise control and versatility in circuit design.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Surface mount technology enables easy integration onto PCBs, saving space and improving efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and orientation on PCBs.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and reliability during soldering.

Minimum DC Current Gain (hFE): 40

A higher minimum DC current gain ensures a more stable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable operation even in demanding environments.

Maximum Collector-Base Capacitance: 4 pF

Low collector-base capacitance minimizes interference and distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 15 V

Suitable for low voltage applications, providing reliable performance within the specified voltage range.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics and is widely used in semiconductor devices.

Maximum Collector Current (IC): 0.5 A

A maximum collector current of 0.5 A allows for handling moderate power levels in amplifier circuits.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good solderability and conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options on PCBs.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures proper soldering and reliability during assembly processes.

Nominal Transition Frequency (fT): 550 MHz

High transition frequency allows for high-speed switching and amplification in RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMPQ2369 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

16

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMPQ2369 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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