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MMPQ2369R2

Onsemi

MMPQ2369R2 by Onsemi

The Onsemi MMPQ2369R2 is an NPN RF BJT with 4 elements, ideal for amplifier applications. It features a max operating temp of 150 °C, fT of 550 MHz, and hFE of 40. This transistor has a max VCE of 15V and IC of 0.5A, making it suitable for high-frequency circuits in small outline packages.

Median Price

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Lifecycle Status

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1k+

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Digiode

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Vyrian

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Kulean Microsystems

USA . 8,367 parts In-Stock

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Problanco Electronics

Mexico . 5,583 parts In-Stock

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SupplyDigital Components

Austria . 4,238 parts In-Stock

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TANS Electronics

Latvia . 3,699 parts In-Stock

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Corphita

USA . 1,559 parts In-Stock

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Metaverse IC Inc.

Canada . 1,320 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 629 parts In-Stock

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Corohmni

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Overview

Unlock the power of innovation with the Onsemi MMPQ2369R2, a top-tier RF Small Signal Bipolar Junction Transistor meticulously crafted to elevate your amplifier applications. Manufactured by industry leader Onsemi, this NPN transistor boasts exceptional quality and reliability, housed in a sleek, space-saving small outline package. With a minimum DC current gain of 40 and a blazing nominal transition frequency of 550 MHz, this transistor offers unparalleled performance and precision. Trust Onsemi to deliver cutting-edge technology that exceeds expectations, setting you apart from the competition. Elevate your projects with the MMPQ2369R2 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SEPARATE, 4 ELEMENTS

Having 4 separate elements allows for more flexibility and customization in circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration into circuit boards.

Package Shape: RECTANGULAR

Rectangular shape provides easy handling and mounting on circuit boards.

Terminal Form: GULL WING

Gull wing terminals offer secure and reliable connections in surface mount applications.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in a wide range of environments.

Maximum Collector-Base Capacitance: 4 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 15 V

Suitable for low-voltage applications, ensuring compatibility with a wide range of electronic circuits.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in semiconductor devices.

Maximum Collector Current (IC): 0.5 A

Maximum collector current of 0.5 A allows for handling moderate power levels in the circuit.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures reliable connections.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options on circuit boards.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures reliable soldering during manufacturing and assembly.

Nominal Transition Frequency (fT): 550 MHz

High transition frequency of 550 MHz enables high-speed signal amplification and processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMPQ2369R2 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

16

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMPQ2369R2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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