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2N4996

Texas Instruments

2N4996 by Texas Instruments

2N4996 by Texas Instruments is an NPN RF BJT with a max. collector-emitter voltage of 18V, ideal for amplifier applications in the VHF band. It has a min. DC current gain of 50 and operates at up to 150°C, with a transition frequency of 600MHz for high-frequency performance.

Median Price

$4.605

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 79 parts In-Stock

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$4.210

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Ace Electronics

USA . 5 parts In-Stock

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$5.000

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$5.000

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Digiode

USA . 4,009 parts In-Stock

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Vyrian

USA . 2,376 parts In-Stock

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Resion

USA . 155 parts In-Stock

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ECAB

Sweden . 85 parts In-Stock

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Electronic Expediters

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LittleDiode

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Distributors (Availability)

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Parana Technologies

USA . 891 parts In-Stock

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$1.219

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$2.007

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891

$1.219

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$2.007

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DigiPath Technology Company

USA . 451 parts In-Stock

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$1.343

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$1.235

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451

$1.343

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ChromeModa Solutions

Germany . 4,532 parts In-Stock

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$1.370

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$1.123

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$1.370

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IDEA Electronic Components Group

UK . 1,248 parts In-Stock

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$1.370

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$1.233

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AZTECH Wire

Italy . 832 parts In-Stock

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$6.938

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$6.938

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One Stop Electronics

USA . 1,009 parts In-Stock

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$23.050

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Corphita

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Northwest PG Solutions

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Native Components

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Overview

Elevate your RF signal amplification with the Texas Instruments 2N4996 transistor. Crafted with precision and quality, this NPN transistor is designed for very high-frequency applications in a single configuration. Whether you're amplifying signals in communication systems or radar applications, the 2N4996 offers exceptional performance and reliability. With a maximum collector-emitter voltage of 18V and a transition frequency of 600 MHz, this transistor delivers optimal power dissipation and efficiency. Upgrade your amplifier circuits today with the superior technology of the 2N4996 by Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection, making the transistor suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications and offer good current gain.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Package Shape: ROUND

Round package shape is compact and facilitates easy mounting on circuit boards.

Terminal Form: WIRE

Wire terminals offer secure connections and ease of installation.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for use in high-frequency applications such as radio frequency circuits.

No. of Terminals: 3

Three terminals provide necessary connections for proper transistor operation.

Maximum Power Dissipation: 0.25 W

Capable of handling power dissipation efficiently, ensuring reliable performance under specified conditions.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a neat and compact form factor for easy integration into circuit layouts.

Minimum DC Current Gain (hFE): 50

Minimum DC current gain of 50 ensures sufficient amplification capability in amplification circuits.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without compromising performance, ideal for demanding applications.

Maximum Collector-Base Capacitance: 0.65 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 18 V

Suitable for voltage amplification tasks within the specified voltage range.

Transistor Element Material: SILICON

Silicon material ensures reliability and stable performance over extended periods of use.

Maximum Collector Current (IC): 0.05 A

Capable of handling collector currents up to 0.05 A, suitable for small signal amplification.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB layout and soldering during assembly.

Nominal Transition Frequency (fT): 600 MHz

High nominal transition frequency of 600 MHz enables efficient signal amplification at high frequencies.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N4996 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.65 pF

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4996 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-056-8552, 5961010568552

NIIN

010568552

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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