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MPS918RLRE

Onsemi

MPS918RLRE by Onsemi

MPS918RLRE by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates in the ultra-high frequency band and has a max collector-emitter voltage of 15V. Ideal for amplifier applications, it features a plastic/epoxy package body and can handle up to 0.05A collector current at 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,423 parts In-Stock

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Vyrian

USA . 1,122 parts In-Stock

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Problanco Electronics

Mexico . 8,330 parts In-Stock

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SupplyDigital Components

Austria . 6,484 parts In-Stock

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TANS Electronics

Latvia . 5,574 parts In-Stock

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Kulean Microsystems

USA . 5,570 parts In-Stock

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Corphita

USA . 2,376 parts In-Stock

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UHIMA Technologies

Türkiye . 728 parts In-Stock

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Corohmni

South Africa . 354 parts In-Stock

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Overview

Transform your electronic designs with the MPS918RLRE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality RF Small Signal Bipolar Junction Transistors (BJT) like no other. The NPN configuration and ultra-high frequency band make this transistor perfect for amplifier applications. With its durable plastic/epoxy package and excellent performance specifications, this product offers unmatched value, reliability, and efficiency to customers looking to elevate their projects to the next level. Elevate your designs with the MPS918RLRE today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

The round package shape offers easy mounting and handling during assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, suitable for applications where vibration or mechanical stress is a concern.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

The ultra-high frequency band capability makes this transistor suitable for high-speed applications where signal integrity is critical.

No. of Terminals: 3

Having 3 terminals allows for versatile circuit configurations and connections.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and ease of integration into existing circuit designs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the transistor can withstand demanding environmental conditions.

Maximum Collector-Base Capacitance: 3 pF

Low collector-base capacitance helps minimize signal distortion and improve high-frequency performance.

Maximum Collector-Emitter Voltage: 15 V

The high maximum collector-emitter voltage rating of 15V provides a safe operating margin for various applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance in electronic devices.

Maximum Collector Current (IC): 0.05 A

The maximum collector current rating of 0.05A allows for suitable power handling capability in amplifier circuits.

Terminal Finish: TIN LEAD

The tin-lead terminal finish offers good solderability and reliability in manufacturing processes.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering processes.

Nominal Transition Frequency (fT): 600 MHz

The high nominal transition frequency of 600MHz indicates the transistor's ability to amplify signals at high frequencies with minimal distortion.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS918RLRE attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS918RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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