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MPS918RL

Onsemi

MPS918RL by Onsemi

MPS918RL by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a max operating temperature of 150 °C. This through-hole transistor has a package style of cylindrical shape with three terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,187 parts In-Stock

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Digiode

USA . 486 parts In-Stock

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486

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Kulean Microsystems

USA . 7,925 parts In-Stock

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SupplyDigital Components

Austria . 5,323 parts In-Stock

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Problanco Electronics

Mexico . 4,579 parts In-Stock

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TANS Electronics

Latvia . 2,588 parts In-Stock

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Corphita

USA . 1,461 parts In-Stock

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UHIMA Technologies

Türkiye . 340 parts In-Stock

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Corohmni

South Africa . 59 parts In-Stock

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Overview

Elevate your RF signal amplification with the MPS918RL by Onsemi. Crafted with precision and expertise, this NPN transistor offers unparalleled performance in ultra-high frequency bands. Perfect for amplifier applications, this small signal BJT boasts a maximum transition frequency of 600 MHz, ensuring optimal signal processing capabilities. Trust in Onsemi's reputation for quality and reliability, and experience the value and benefits that the MPS918RL brings to your projects. Unlock new possibilities and enhance your designs with this high-performing component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in projects.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

Offers a compact and space-saving design, making it suitable for applications where space is limited.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra-high frequency band, making it ideal for high-frequency applications.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, providing reliability in various environments.

Maximum Collector-Base Capacitance: 3 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage: 15 V

Able to handle high collector-emitter voltages, suitable for applications requiring higher voltage operation.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and efficiency, making this product a reliable choice.

Maximum Collector Current (IC): 0.05 A

Able to handle moderate collector currents, suitable for low to medium power applications.

Terminal Finish: TIN LEAD

Tin lead terminals ensure good solderability and connection reliability for easy integration into circuits.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency allows for high-speed operation, making it suitable for fast switching applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS918RL attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS918RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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