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NE85634-T1-A

Renesas Electronics

NE85634-T1-A by Renesas Electronics

NE85634-T1-A by Renesas Electronics is a NPN RF BJT transistor with max fT of 6500 MHz. It operates at 150°C, has Vce(max) of 12V, and Ic(max) of 0.1A. Ideal for L Band applications like amplifiers due to its small outline package and flat terminal form.

Median Price

$0.610

Lifecycle Status

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4

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1k+

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Nova Conductors

Japan . 10 parts In-Stock

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Vyrian

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Prism Electronics

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Aranea Global

USA . 100 parts In-Stock

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$0.598

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$0.574

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Argo Parts USA

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Continental Prestige Electronics

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AZTECH Wire

Italy . 554 parts In-Stock

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Perfect Parts

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Overview

Unleash the power of innovation with the NE85634-T1-A by Renesas Electronics, a top-tier manufacturer known for its superior quality and reliability. This RF Small Signal Bipolar Junction Transistor (BJT) is designed for high-performance applications such as amplifiers in the L BAND frequency range. With a maximum operating temperature of 150°C and a collector-emitter voltage of 12V, this transistor offers unmatched stability and efficiency. Elevate your projects to new heights with the NE85634-T1-A and experience seamless connectivity and optimal performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and allows for cost-effective production.

Polarity or Channel Type: NPN

NPN transistors are commonly used and well-suited for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in such applications.

Surface Mount: YES

Surface mount capability facilitates easy and compact PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient space utilization on the PCB.

Terminal Form: FLAT

Flat terminals ensure secure connection and ease of soldering.

Highest Frequency Band: L BAND

Operation in the L Band frequency range makes this transistor suitable for use in a wide range of applications.

No. of Terminals: 3

Three terminals provide the necessary connections for proper transistor operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high-density mounting.

Maximum Operating Temperature: 150 °C

Withstand high operating temperatures, ensuring reliability in various environments.

Maximum Collector-Base Capacitance: 1 pF

Low capacitance minimizes signal distortion and improves performance.

Maximum Collector-Emitter Voltage: 12 V

Higher voltage handling capability allows for versatility in different circuit designs.

Transistor Element Material: SILICON

Silicon-based construction offers excellent performance and reliability.

Maximum Collector Current (IC): 0.1 A

Adequate collector current rating for many small signal applications.

Terminal Position: SINGLE

Single terminal position simplifies connection and integration into circuits.

Case Connection: COLLECTOR

Collector case connection enhances thermal characteristics and overall performance.

Nominal Transition Frequency (fT): 6500 MHz

High transition frequency enables the transistor to operate efficiently at high frequencies.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NE85634-T1-A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PSSO-F3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NE85634-T1-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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