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NE85633-T1B-A

Renesas Electronics

NE85633-T1B-A by Renesas Electronics

NE85633-T1B-A by Renesas Electronics is a NPN BJT transistor for RF applications. It operates in the ultra high frequency band with a transition frequency of 7000 MHz. This single configuration transistor has a max collector-emitter voltage of 12V and is suitable for amplifier circuits in small outline packages.

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Overview

Elevate your RF signal amplification with the NE85633-T1B-A by Renesas Electronics, a top-notch NPN transistor designed for ultra high frequency applications. Renowned for their quality and reliability, Renesas Electronics delivers cutting-edge technology in a compact, easy-to-mount package. Ideal for amplifier circuits, this transistor offers enhanced performance and efficiency, making it a valuable asset for your projects. Experience the benefits of superior functionality and seamless integration with the NE85633-T1B-A – the perfect choice for your RF signal needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

A plastic/epoxy body material makes the transistor lightweight and durable, ideal for portable devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

A single configuration transistor simplifies circuit design and reduces complexity in amplifier applications.

Surface Mount: YES

Being surface mountable makes it easier to integrate this transistor into compact electronic designs.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band, this transistor is suitable for high-performance amplifier applications.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels efficiently.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures stable and reliable amplification in circuits.

Maximum Collector-Emitter Voltage: 12 V

The maximum collector-emitter voltage of 12V allows for use in low to moderate voltage applications.

Nominal Transition Frequency (fT): 7000 MHz

With a high nominal transition frequency of 7000MHz, this transistor is capable of providing high-frequency amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NE85633-T1B-A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NE85633-T1B-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Renesas Electronics

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