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BSX29

STMicroelectronics

BSX29 by STMicroelectronics

BSX29 by STMicroelectronics is a PNP RF small signal BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 150 °C, and has a nominal transition frequency of 700 MHz. Ideal for compact electronic circuits requiring efficient signal control.

Median Price

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Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

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Fibra_Brandt Electronic GMBH

Germany . 1,180 parts In-Stock

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1,180

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Digital Electronic Gebert Verwaltungs UG

Germany . 1,000 parts In-Stock

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1,000

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Anansix

USA . 856 parts In-Stock

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856

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ComSIT Distribution GmbH

Germany . 624 parts In-Stock

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624

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Vyrian

USA . 446 parts In-Stock

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446

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Manotoh

Italy . 443 parts In-Stock

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443

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Digiode

USA . 159 parts In-Stock

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159

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J2 Sourcing AB

Sweden . 130 parts In-Stock

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130

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Corel Iberica Componentes, S.L.

Spain . 99 parts In-Stock

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99

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LittleDiode

UK . 73 parts In-Stock

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73

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ECAB

Sweden . 39 parts In-Stock

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39

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Sinequanon

UK . 7 parts In-Stock

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GES GmbH

Germany . 3 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,155 parts In-Stock

1+ parts

$1.256

100+ parts

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$1.130

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$1.256

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$1.130

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MKK Technologies

India . 1,768 parts In-Stock

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$2.361

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1,768

$2.361

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DigiPath Technology Company

USA . 1,768 parts In-Stock

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$2.361

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1,768

$2.361

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Native Components

USA . 543 parts In-Stock

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$39.980

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$38.381

543

$39.980

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$38.381

Northwest PG Solutions

USA . 1,907 parts In-Stock

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$43.978

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1,907

$43.978

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Assy Fe

Spain . 7,226 parts In-Stock

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Parana Technologies

USA . 2,369 parts In-Stock

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$1.502

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2,369

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$1.502

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Corphita

USA . 1,684 parts In-Stock

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1,684

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Perfect Parts

USA . 260 parts In-Stock

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260

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Cyclops Electronics Ltd (Excess)

UK . 116 parts In-Stock

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116

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Overview

Experience unparalleled performance with the BSX29 from STMicroelectronics, a leader in semiconductor innovation. Designed for seamless switching applications, this high-quality PNP transistor boasts exceptional durability and reliability, perfect for a wide range of electronic devices. With its robust metal package and superior temperature tolerance, the BSX29 delivers efficiency and longevity, empowering your projects with cutting-edge technology and peace of mind. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: METAL

The metal body provides enhanced durability and thermal conductivity, ensuring stable operation in various environments.

Polarity or Channel Type: PNP

The PNP configuration allows for versatile application in analog circuits and is well-suited for use in signal amplification.

Configuration: SINGLE

A single configuration minimizes complexity and size, making it ideal for compact electronic designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT excels in high-speed on-off control, improving the efficiency of electronic circuits.

Package Shape: ROUND

The round package shape optimizes physical space and allows for effective component placement in circuit boards.

Terminal Form: WIRE

Wire terminal form facilitates easy connections and modifications in prototyping and additional circuit configurations.

No. of Terminals: 3

With three terminals, this transistor simplifies integration into numerous circuit designs, reducing layout complexity.

Maximum Power Dissipation (Abs): 0.36 W

A maximum power dissipation of 0.36 W ensures that the transistor can handle a respectable amount of energy without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style aids in efficient packing density and can enhance thermal management.

Minimum DC Current Gain (hFE): 30

An hFE of 30 provides sufficient current amplification, making it effective for various signal amplification tasks.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor is suitable for harsh conditions, ensuring reliable performance.

Maximum Collector-Base Capacitance: 6 pF

A low collector-base capacitance of 6 pF minimizes signal delay, making it a good choice for high-frequency applications.

Maximum Collector-Emitter Voltage: 12 V

The 12 V rating allows for flexibility in various voltage applications, making it a versatile component for multiple circuit designs.

Transistor Element Material: SILICON

Silicon as the element material ensures good thermal stability and excellent electronic characteristics, enhancing overall reliability.

Maximum Collector Current (IC): 0.2 A

With a max collector current of 0.2 A, this BJT is suitable for low to moderate power applications, ensuring safe operation without damage.

Terminal Finish: TIN LEAD

The tin-lead terminal finish enhances solderability, ensuring strong and reliable connections in electronic assemblies.

Terminal Position: BOTTOM

Bottom terminal positioning allows for better space management on PCBs and simplifies design layouts.

Nominal Transition Frequency (fT): 700 MHz

A transition frequency of 700 MHz indicates that the transistor is capable of handling high-frequency signals, making it ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BSX29 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BSX29 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-163-1430, 5961001631430, 5961-00-453-2111, 5961004532111, 5961-15-051-2655, 5961150512655, 5961-01-294-6042, 5961012946042, 5961-14-340-4894, 5961143404894, 5961-98-105-9562, 5961981059562, 8010-99-220-1108, 8010992201108

NIIN

001631430, 004532111, 150512655, 012946042, 143404894, 981059562, 992201108

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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