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MMBTH34

Onsemi

MMBTH34 by Onsemi

MMBTH34 by Onsemi is a NPN RF BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.35W and operates at up to 135 °C. With a transition frequency of 500MHz, it offers high performance in a small outline package.

Median Price

$0.229

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

51,000

-

$0.238

$0.197

$0.176

Verical

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.220

30,000

-

-

-

$0.220

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,207 parts In-Stock

1+ parts

$0.159

100+ parts

-

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-

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1,207

$0.159

-

-

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Digiode

USA . 2,056 parts In-Stock

1+ parts

$0.185

100+ parts

-

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2,056

$0.185

-

-

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DigiKey Marketplace

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.200

10k+ parts

-

51,000

-

-

$0.200

-

Lighthouse Electronics, Inc.

USA . 4,724 parts In-Stock

1+ parts

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4,724

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

1+ parts

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3,000

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Bristol Electronics

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Dan-Mar Components

USA . 3,000 parts In-Stock

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3,000

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Anansix

USA . 1,035 parts In-Stock

1+ parts

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1,035

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Distributors (Availability)

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Corohmni

South Africa . 110 parts In-Stock

1+ parts

$0.159

100+ parts

-

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110

$0.159

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Corphita

USA . 1,990 parts In-Stock

1+ parts

$0.176

100+ parts

-

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1,990

$0.176

-

-

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Continental Prestige Electronics

USA . 51,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.234

10k+ parts

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51,000

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-

$0.234

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Kulean Microsystems

USA . 7,724 parts In-Stock

1+ parts

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7,724

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A-Z Elektronik GmbH

Germany . 6,534 parts In-Stock

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6,534

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Problanco Electronics

Mexico . 5,715 parts In-Stock

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5,715

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TANS Electronics

Latvia . 4,370 parts In-Stock

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4,370

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Perfect Parts

USA . 1,385 parts In-Stock

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1,385

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SupplyDigital Components

Austria . 1,072 parts In-Stock

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1,072

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Supply Digital

USA . 563 parts In-Stock

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563

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UHIMA Technologies

Türkiye . 369 parts In-Stock

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369

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Overview

Upgrade your RF amplifier circuits with the MMBTH34 by Onsemi. Known for their high-quality manufacturing, Onsemi produces top-of-the-line RF Small Signal Bipolar Junction Transistors that deliver exceptional performance in very high-frequency bands. The NPN configuration and small outline package make it ideal for various applications, providing customers with a reliable and efficient solution for their amplifier needs. Experience the value and benefits of choosing Onsemi for your electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and helps in reducing the overall weight of the product.

Polarity or Channel Type: NPN

NPN polarity type is commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring high performance in amplifying signals.

Surface Mount: YES

Surface mount compatibility allows for easy and convenient installation on circuit boards.

Package Shape: RECTANGULAR

Rectangular shape helps in efficient placement and alignment on the circuit board.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for very high-frequency applications, ensuring high-speed performance.

Maximum Power Dissipation: 0.35 W

High maximum power dissipation rating allows the transistor to handle power efficiently.

Package Style: SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact designs.

Maximum Operating Temperature: 135 °C

High maximum operating temperature range ensures stable performance even in high-temperature environments.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage rating provides flexibility in various circuit applications.

Transistor Element Material: SILICON

Silicon material ensures high reliability and performance of the transistor.

Maximum Collector Current (IC): 0.05 A

High maximum collector current rating allows for handling higher currents in the circuit.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures a reliable electrical connection.

Terminal Position: DUAL

Dual terminal position makes it easier for installation and connection in the circuit.

Nominal Transition Frequency (fT): 500 MHz

High nominal transition frequency allows for high-speed switching and amplification of signals.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMBTH34 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTH34 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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