Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MMBT5179 by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.4V and min Gp of 15dB, ideal for amplifier applications in the ultra-high frequency band. This single configuration transistor has a small outline package style, operates up to 150°C, and features a transition frequency of 900MHz.
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DigiKey
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Arrow
Verical
Rochester
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Avnet
Master Electronics
Chip1Stop
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Farnell
$0.032
Element14
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Flip Electronics (Authorized)
RS (Exports)
$0.104
$0.070
Digiode
Nova Conductors
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TME
$0.090
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Maritex
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Bristol Electronics
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NAC Semi
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LWI Electronics Inc
Dan-Mar Components
Flip Electronics
ACDS - Activité Composants Distribution Service
Prism Electronics
Netsource Technology, Inc.
EMSNET
LIBRA Elektronik GmbH
Semi Source
Semtec, LLC
Anansix
Lighthouse Electronics, Inc.
J & M Industries LLC
Electronic Expediters
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Sea View Technologies
Holdelec - ElecDif-Pro
Elcom Components
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Corphita
Corohmni
Semicontronic
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Aranea Global
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Argo Parts USA
$0.063
Continental Prestige Electronics
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Aztec Data Supply Inc.
$1.714
Perfect Parts
Metaverse IC Inc.
QUARKTWIN TECHNOLOGY LTD
Cyclops Electronics Ltd (Excess)
iodParts Technologies Inc.
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Eastek
Kepictronics
Glotronic Ltd.
SupplyDigital Components
Infinite Electronics LLP (Excess)
Formix International (Excess)
TANS Electronics
GreenTree Electronics
Kulean Microsystems
Problanco Electronics
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UHIMA Technologies
Provides durability and protection for the components inside, ensuring a longer lifespan for the product.
Allows for easy integration with other NPN components in circuits.
Simplifies circuit design and makes it easier to work with.
Specifically designed for amplification applications, ensuring reliable performance in those scenarios.
Enables easy and efficient assembly onto circuit boards during manufacturing.
Low VCEsat minimizes power dissipation and improves efficiency of the transistor.
High power gain ensures effective amplification of signals.
Offers a compact and efficient form factor for easy integration into circuit designs.
Facilitates easy and secure connections during soldering.
Sufficient number of terminals for connections in typical amplifier circuits.
Can handle a reasonable amount of power dissipation without overheating.
Ensures consistent and stable amplification performance.
Can operate at relatively high temperatures without performance degradation.
Low capacitance helps in minimizing interference and improving high-frequency performance.
Can withstand relatively high voltage levels in the circuit.
Silicon is a widely used and reliable material for transistors, ensuring stability and performance.
Can handle moderate current levels in amplifier circuits.
Provides a good surface for soldering and secure connections.
Allows for flexibility in circuit board layout and connections.
Ensures proper soldering during manufacturing processes.
Compatible with standard reflow soldering processes.
High transition frequency provides good high-frequency performance for signal amplification.
RF Small Signal Bipolar Junction Transistors (BJT) MMBT5179 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Minimum Power Gain (Gp):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
Maximum VCEsat:
MMBT5179 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00.75
SB
8541.21.00.80
NSN
5961-01-545-8517, 5961015458517
NIIN
015458517
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148WS
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Souriau
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;
LM358N
Texas Instruments
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
B340A-13-F
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
U.FL-R-SMT-1(10)
Hirose Electric
U.FL-R-SMT-1(10) by Hirose Electric is a RF connector with 50 ohm impedance, 0.05 dB insertion loss, and 8 GHz operating frequency. Ideal for board mounting in commercial applications, it features gold termination finish, liquid crystal polymer insulator, and 200VAC dielectric voltage resistance.
2N7002
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
1N4148
American Power Devices
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
STMicroelectronics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LM7805CT
Onsemi
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
Sangdest Microelectronics (Nanjing)
EU2B-YS3103F
Idec
ROTARY SWITCH;
LM2931Z-5.0RPG
LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.
EU2B-YS2J03C
2N2222A
Transistor & Electronic
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
OHN3020U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
BSS123,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
Microchip Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
SMBJ18CA
Bourns
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Sensitron Semiconductor
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
BFY90
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .025 A;
2SC5374A-TL-E
RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Terminal Finish: Tin/Bismuth (Sn/Bi); Moisture Sensitivity Level (MSL): 1;
CA3083M
Harris Semiconductor
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;
BFT92
NXP Semiconductors
The NXP Semiconductors BFT92 is a PNP RF BJT transistor with 3 terminals, suitable for ultra-high frequency band applications. It has a max power dissipation of 0.3W, hFE of 20, and fT of 5000MHz. Ideal for amplifier circuits in small outline packages requiring high-frequency performance.
CA3086
NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: THROUGH-HOLE;
MPSH81RLRA
MPSH81RLRA by Onsemi is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 20V, fT of 600MHz, and low 0.85pF capacitance. Ideal for amplifier applications due to its silicon element material and through-hole terminal form.
2SC5227A-5-TB-E
Onsemi's 2SC5227A-5-TB-E is an NPN RF BJT with max power dissipation of 0.2W, hFE of 135, and fT of 5000MHz. Ideal for high-frequency applications in electronics due to its small signal capabilities and surface-mount configuration.
PN5179/D26Z
National Semiconductor
PN5179/D26Z by National Semiconductor is an NPN BJT transistor with VCEsat of 0.4V, Gp of 15dB, and fT of 900MHz. Ideal for amplifier applications in the very high-frequency band due to its silicon element material and 12V max collector-emitter voltage. The package is cylindrical with a plastic/epoxy body, through-hole terminals, and a single configuration.
BF959
BF959 by Onsemi is a NPN RF BJT transistor with 3 terminals. It operates in the very high frequency band up to 700 MHz, ideal for amplifier applications. With a max power dissipation of 0.625W and max collector current of 0.1A, it can handle various signal amplification tasks efficiently.
BF495C
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A;
LM3046MX/NOPB
NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
MSC2295-BT1
The Onsemi MSC2295-BT1 is an NPN RF BJT transistor with 3 terminals, ideal for amplifier applications. It has a max operating temp of 150 °C, fT of 150 MHz, and hFE of 70. The package is small outline with gull wing terminals, suitable for surface mount assembly.
2N5583
Motorola
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1500 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
934059126115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; No. of Terminals: 4;
2N3643
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
2N4401
Space Power Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
JANTX2N5109
Semicoa
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A;
MMBTH81LT3
The Onsemi MMBTH81LT3 is a PNP RF BJT with 600 MHz fT, 20V VCEO, and 0.85pF CCB. Ideal for UHF applications, it features a Gull Wing terminal form in a small outline package. Suitable for high-frequency designs requiring compact size and low capacitance.
MPSH81RLRE
MPSH81RLRE by Onsemi is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It operates at a max temp of 150 °C, has a max Vce of 20V, and fT of 600MHz. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance.
MPS3640
International Devices
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;
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MMBTH81
Fairchild Semiconductor
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
The Onsemi MMBTH81 is a PNP RF BJT with 3 terminals, operating in the VHF band. It has a max power dissipation of 0.35W and transition frequency of 600MHz. Ideal for amplifier applications due to its high collector-emitter voltage and small outline package style.
MMBTH10LT1G
MMBTH10LT1G by Onsemi is an NPN RF transistor with a max operating temperature of 150°C. It has a small outline package style and can handle a max collector-emitter voltage of 25V. This transistor is commonly used in ultra high frequency band applications.
MMBTH81_NL
MMBTH81_NL by Fairchild Semiconductor is a PNP RF BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 0.35W, DC current gain of 60 (hFE), and operates at temperatures up to 150°C. This surface-mount transistor features a small outline package with gull wing terminals.
MMBTH81D87Z
MMBTH81D87Z by National Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the very high-frequency band, featuring a small outline package with gull wing terminals for surface mount assembly.
MMBTH81LT1
MMBTH81LT1 by Onsemi is a PNP RF small signal BJT with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is commonly used in applications requiring ultra high frequency band performance, such as wireless communication systems.
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MMBT918LT1G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;
MMBT5179
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
MMBTH11
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
MMBTH11 by Onsemi is a NPN BJT transistor for RF applications. It operates in the very high frequency band with a max fT of 650 MHz. With a collector-emitter voltage of 25V and max power dissipation of 0.35W, it is ideal for amplifier circuits in small outline packages.
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 660 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
MMBTH10
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;
Panjit International
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-PDSO-G3;
Jiangsu Changjiang Electronics Technology
Secos
MMBT5179/S62Z
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;
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