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MMBTH81D87Z

National Semiconductor

MMBTH81D87Z by National Semiconductor

MMBTH81D87Z by National Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the very high-frequency band, featuring a small outline package with gull wing terminals for surface mount assembly.

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Anansix

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Digiode

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Nova Conductors

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South Africa . 21 parts In-Stock

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$0.424

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Aztec Data Supply Inc.

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Semicontronic

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AZTECH Wire

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Ampacity Inc.

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Overview

Upgrade your electronic projects with the MMBTH81D87Z by National Semiconductor. This RF Small Signal Bipolar Junction Transistor is a game-changer in amplifier applications, thanks to its high-quality construction and very high-frequency band capabilities. With a maximum collector-emitter voltage of 20V and a nominal transition frequency of 600MHz, this PNP transistor provides exceptional performance and reliability. Trust National Semiconductor's expertise in semiconductor manufacturing to deliver top-of-the-line components for your projects. Elevate your designs with the MMBTH81D87Z and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long term reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, adds versatility to the product.

Configuration: SINGLE

Simplified design and easy to use in various circuit configurations.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring high performance in signal amplification.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving space and improving manufacturability.

Package Shape: RECTANGULAR

Compact shape that fits well in modern electronic designs, optimizing space usage.

Terminal Form: GULL WING

Facilitates surface mount installation and provides secure electrical connections.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for high frequency applications, ideal for use in communication systems and RF devices.

No. of Terminals: 3

Simple and straightforward connectivity, less chance of errors in installation.

Package Style (Meter): SMALL OUTLINE

Space-saving design, compatible with modern SMD assembly processes.

Maximum Collector-Base Capacitance: 0.85 pF

Low capacitance minimizes signal distortion and improves high frequency performance.

Maximum Collector-Emitter Voltage: 20 V

Sufficient voltage rating for most small signal applications, offers flexibility in circuit design.

Transistor Element Material: SILICON

Reliable and stable semiconductor material, widely used in semiconductor industry.

Maximum Collector Current (IC): 0.05 A

Adequate current handling capability for small signal applications, ensures safe operation.

Terminal Position: DUAL

Offers flexibility in board layout and circuit design, easy to connect and integrate into circuits.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency enables high frequency operation, suitable for RF and amplifier circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMBTH81D87Z attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from National Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.85 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTH81D87Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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