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MCH4014-TL-H

Onsemi

MCH4014-TL-H by Onsemi

MCH4014-TL-H by Onsemi is an NPN RF BJT with max power dissipation of 0.35W, fT of 8000MHz, and hFE of 60. Ideal for applications requiring high-frequency signal amplification in a surface-mount configuration.

Median Price

$0.160

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,827 parts In-Stock

1+ parts

$0.660

100+ parts

$0.262

1k+ parts

$0.178

10k+ parts

-

2,827

$0.660

$0.262

$0.178

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Flip Electronics (Authorized)

USA . 105,000 parts In-Stock

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105,000

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Rochester

USA . 85,969 parts In-Stock

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-

100+ parts

$0.160

1k+ parts

$0.133

10k+ parts

$0.118

85,969

-

$0.160

$0.133

$0.118

Verical

USA . 57,000 parts In-Stock

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-

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$0.148

57,000

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$0.148

Distributors (In-Stock)

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Vyrian

USA . 118 parts In-Stock

1+ parts

$0.121

100+ parts

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118

$0.121

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Digiode

USA . 1,699 parts In-Stock

1+ parts

$0.124

100+ parts

-

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1,699

$0.124

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-

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Flip Electronics

USA . 105,000 parts In-Stock

1+ parts

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105,000

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Distributors (Availability)

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Corphita

USA . 1,043 parts In-Stock

1+ parts

$0.118

100+ parts

-

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1,043

$0.118

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Corohmni

South Africa . 69 parts In-Stock

1+ parts

$0.121

100+ parts

-

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69

$0.121

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Continental Prestige Electronics

USA . 85,969 parts In-Stock

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$0.121

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85,969

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$0.121

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Kepictronics

USA . 28,969 parts In-Stock

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28,969

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TANS Electronics

Latvia . 8,187 parts In-Stock

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8,187

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Problanco Electronics

Mexico . 5,806 parts In-Stock

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5,806

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Kulean Microsystems

USA . 1,278 parts In-Stock

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1,278

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UHIMA Technologies

Türkiye . 661 parts In-Stock

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661

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SupplyDigital Components

Austria . 296 parts In-Stock

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296

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Microchip USA

USA . 136 parts In-Stock

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136

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Overview

Discover the unparalleled performance and reliability of the MCH4014-TL-H by Onsemi, a leading manufacturer in the industry. This RF Small Signal Bipolar Junction Transistor (BJT) offers top-notch quality and is perfect for a wide range of applications. With its NPN polarity, single configuration, and surface mount capability, this product provides exceptional value and benefits to customers. Experience seamless operation, high efficiency, and unmatched durability with the MCH4014-TL-H - the ultimate choice for your electronic projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for a variety of applications.

Configuration: SINGLE

Single configuration makes it easier to design and integrate into circuits, providing simplicity and efficiency in the application.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, making this product suitable for automated manufacturing processes.

Maximum Power Dissipation: 0.35 W

With a high maximum power dissipation of 0.35W, this transistor can handle higher power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures that this transistor provides sufficient current gain for amplification purposes, improving signal integrity.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to withstand elevated temperatures, increasing its reliability and lifespan.

Maximum Collector Current (IC): 0.03 A

With a maximum collector current of 0.03A, this transistor can handle moderate current levels, suitable for low to medium power applications.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and protects the terminals from oxidation, ensuring a reliable electrical connection.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature indicates good thermal stability during soldering processes, preventing damage to the transistor.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes, ensuring stable and consistent performance.

Nominal Transition Frequency (fT): 8000 MHz

The high nominal transition frequency of 8000MHz indicates that this transistor is capable of high-frequency operation, suitable for GHz range applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MCH4014-TL-H attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

MCH4014-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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