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TIS64A

Texas Instruments

TIS64A by Texas Instruments

TIS64A by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.5W, operating temperature up to 150°C, and a transition frequency of 500MHz. The package style is cylindrical with a plastic/epoxy body material and wire terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,387 parts In-Stock

1+ parts

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6,387

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Digiode

USA . 3,816 parts In-Stock

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3,816

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,191 parts In-Stock

1+ parts

$1.618

100+ parts

-

1k+ parts

$2.244

10k+ parts

-

2,191

$1.618

-

$2.244

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IDEA Electronic Components Group

UK . 821 parts In-Stock

1+ parts

$1.818

100+ parts

-

1k+ parts

$1.636

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-

821

$1.818

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$1.636

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ChromeModa Solutions

Germany . 35 parts In-Stock

1+ parts

$1.818

100+ parts

$1.491

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-

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35

$1.818

$1.491

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AZTECH Wire

Italy . 330 parts In-Stock

1+ parts

$18.935

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-

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330

$18.935

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Ampacity Inc.

Singapore . 796 parts In-Stock

1+ parts

$41.050

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796

$41.050

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One Stop Electronics

USA . 1,475 parts In-Stock

1+ parts

$47.050

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1,475

$47.050

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Semicontronic

India . 379 parts In-Stock

1+ parts

$60.050

100+ parts

$58.549

1k+ parts

$58.248

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379

$60.050

$58.549

$58.248

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Corphita

USA . 4,867 parts In-Stock

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4,867

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DigiPath Technology Company

USA . 600 parts In-Stock

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100+ parts

$1.639

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600

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$1.639

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Corohmni

South Africa . 457 parts In-Stock

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457

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Overview

Elevate your signal amplification capabilities with the TIS64A by Texas Instruments. Crafted with precision and expertise, this NPN RF Small Signal Bipolar Junction Transistor offers unparalleled performance in the very high-frequency band. Whether you're looking to boost your amplifier's efficiency or enhance your electronic projects, the TIS64A delivers exceptional quality and reliability. Trust Texas Instruments to provide top-notch components that exceed expectations, making your applications shine brighter and perform better. Choose the TIS64A for superior results and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing circuit designs and compatibility with common electronic components.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use for amplification purposes.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, making it well-suited for audio and RF signal processing applications.

Terminal Form: WIRE

Wire terminals provide a reliable connection and are suitable for hand-soldering or automated assembly processes.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connections and enables different biasing configurations for optimal performance.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 12 V

The 12V maximum voltage rating allows for safe operation in low to moderate voltage circuits, protecting the transistor from damage.

Maximum Collector Current (IC): 0.03 A

With a maximum collector current of 0.03A, this transistor can handle moderate current levels for amplification tasks.

Nominal Transition Frequency (fT): 500 MHz

The high transition frequency of 500MHz makes this transistor suitable for high-frequency applications such as RF signal amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) TIS64A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.3 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIS64A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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